Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling von Hazeghi, Arash, Krishnamohan, Tejas, Wong, H.-S. Philip

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High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms von Kuzum, Duygu, Krishnamohan, Tejas, Nainani, Aneesh, Yun Sun, Pianetta, Piero A, Wong, H.-S Philip, Saraswat, Krishna C

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Characteristics of surface states and charge neutrality level in Ge von Kuzum, Duygu, Martens, Koen, Krishnamohan, Tejas, Saraswat, Krishna C.

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The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics von Kuzum, Duygu, Jin-Hong Park, Krishnamohan, Tejas, Wong, H.-S Philip, Saraswat, Krishna C

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InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design von Nainani, Aneesh, Yuan, Ze, Krishnamohan, Tejas, Bennett, Brian R., Boos, J. Brad, Reason, Matthew, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C.

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Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics von Kuzum, Duygu, Park, Jin-Hong, Krishnamohan, Tejas, Saraswat, Krishna C.

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates von Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.

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Ge (100) and (111) N- and P-FETs With High Mobility and Low- T Mobility Characterization von Kuzum, D., Pethe, A.J., Krishnamohan, T., Saraswat, K.C.

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High mobility Ge and III-V materials and novel device structures for high performance nanoscale MOSFETS von Krishnamohan, T., Saraswat, K.

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High performance germanium MOSFETs von Saraswat, Krishna, Chui, Chi On, Krishnamohan, Tejas, Kim, Donghyun, Nayfeh, Ammar, Pethe, Abhijit

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Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics von Wang, Dunwei, Wang, Qian, Javey, Ali, Tu, Ryan, Dai, Hongjie, Kim, Hyoungsub, McIntyre, Paul C., Krishnamohan, Tejas, Saraswat, Krishna C.

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Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density von Kuzum, D., Krishnamohan, T., Pethe, A.J., Okyay, A.K., Oshima, Y., Yun Sun, McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C.

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High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments von Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., Saraswat, K.C.

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High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations von Krishnamohan, T., Donghyun Kim, Chi Dong Nguyen, Jungemann, C., Nishi, Y., Saraswat, K.C.

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Ge based high performance nanoscale MOSFETs von Saraswat, Krishna C., Chui, Chi On, Krishnamohan, Tejas, Nayfeh, Ammar, McIntyre, Paul

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Band-engineering of novel channel materials for high performance nanoscale MOSFETs von Krishnamohan, T., Krishnamohan, T.

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Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope von Krishnamohan, T., Donghyun Kim, Raghunathan, S., Saraswat, K.

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In x Ga 1-x Sb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design von Nainani, Aneesh, Yuan, Ze, Krishnamohan, Tejas, Bennett, Brian R., Boos, J. Brad, Reason, Matthew, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C.

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Novel SiGe Source/Drain for Reduced Parasitic Resistance in Ge NMOS von Raghunathan, Shyam, Krishnamohan, Tejas, Saraswat, Krishna C.

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Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off... von Krishnamohan, T., Donghyun Kim, Dinh, T.V., Pham, A.-t., Meinerzhagen, B., Jungemann, C., Saraswat, K.

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