Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous AlxOy von Sobanska, M., Korona, K. P., Zytkiewicz, Z. R., Klosek, K., Tchutchulashvili, G.

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Analysis of Incubation Times for the Self-Induced Formation of GaN Nanowires: Influence of the Substrate on the Nucleation Mechanism von Sobanska, M, Dubrovskii, V. G, Tchutchulashvili, G, Klosek, K, Zytkiewicz, Z. R

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Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate von Wierzbicka, A, Zytkiewicz, Z R, Kret, S, Borysiuk, J, Dluzewski, P, Sobanska, M, Klosek, K, Reszka, A, Tchutchulashvili, G, Cabaj, A, Lusakowska, E

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Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles von Sobanska, M, Fernández-Garrido, S, Zytkiewicz, Z R, Tchutchulashvili, G, Gieraltowska, S, Brandt, O, Geelhaar, L

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Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy von Klosek, K., Sobanska, M., Tchutchulashvili, G., Zytkiewicz, Z.R., Teisseyre, H., Klopotowski, L.

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Reflectance and fast polarization dynamics of a GaN/Si nanowire ensemble von Korona, K P, Zytkiewicz, Z R, Sobanska, M, Sosada, F E, Dró d, P A, Klosek, K, Tchutchulashvili, G

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Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers von Sobanska, M., Wierzbicka, A., Klosek, K., Borysiuk, J., Tchutchulashvili, G., Gieraltowska, S., Zytkiewicz, Z.R.

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Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer von Wierzbicka, A., Tchutchulashvili, G., Sobanska, M., Klosek, K., Minikayev, R., Domagala, J.Z., Borysiuk, J., Zytkiewicz, Z.R.

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Self-assembled growth of GaN nanowires on amorphous Al x O y : from nucleation to the formation of dense nanowire ensembles von Sobanska, M, Fernández-Garrido, S, Zytkiewicz, Z R, Tchutchulashvili, G, Gieraltowska, S, Brandt, O, Geelhaar, L

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Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous Al{sub x}O{sub y} von Sobanska, M., Zytkiewicz, Z. R., Klosek, K., Tchutchulashvili, G., Korona, K. P.

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Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al sub(2)O sub(3) buffers von Sobanska, M, Wierzbicka, A, Klosek, K, Borysiuk, J, Tchutchulashvili, G, Gieraltowska, S, Zytkiewicz, Z R

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