Optoelectronic device performance on reduced threading dislocation density GaAs/Si von Taylor, P. J., Jesser, W. A., Benson, J. D., Martinka, M., Dinan, J. H., Bradshaw, J., Lara-Taysing, M., Leavitt, R. P., Simonis, G., Chang, W., Clark, W. W., Bertness, K. A.

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Tunable metamaterial device for THz applications based on BaSrTiO3 thin film von Shreiber, D., Zhou, W., Dang, G., Taysing-Lara, M., Metcalfe, G., Ngo, E., Ivill, M., Hirsch, S.G., Cole, M.W.

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Fermi level pinning in low-temperature molecular beam epitaxial GaAs von SHEN, H, RONG, F. C, LUX, R, PAMULAPATI, J, TAYSING-LARA, M, DUTTA, M, POINDEXTER, E. H, CALDERON, L, LU, Y

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1.55 μm Er-doped GaN LED von Shen, H, Pamulapati, J, Taysing, M, Wood, M.C, Lareau, R.T, Ervin, M.H, Mackenzie, J.D, Abernathy, C.R, Pearton, S.J, Ren, F, Zavada, J.M

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Measurement of the GaSb surface band bending potential from the magnetotransport characteristics of GaSb-InAs-AlSb quantum wells von Folkes, P. A., Gumbs, Godfrey, Xu, Wen, Taysing-Lara, M.

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High contrast optical modulator based on electrically tunable polarization rotation and phase retardation in uniaxially strained (100) multiple quantum wells von Shen, H., Pamulapati, J., Wraback, M., Taysing-Lara, M., Dutta, M., Kuo, H.C., Lu, Y.

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High detectivity InGaAs base infrared hot-electron transistor von CHOI, K. K, FOTIADIS, L, TAYSING-LARA, M, CHANG, W, IAFRATE, G. J

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Flip Chip Bonding of 68 \times 68 MWIR LED Arrays von Das, N.C., Taysing-Lara, M., Olver, K.A., Kiamilev, F., Prineas, J.P., Olesberg, J.T., Koerperick, E.J., Murray, L.M., Boggess, T.F.

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High-yield flip-chip bonding and packaging of low-threshold VCSEL arrays on sapphire substrates von Liu, J.J., Olver, K.A., Monica Taysing-Lara, Taylor, T., Wayne Chang, Horst, S.

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Photovoltage amplification and quasi-photovoltaic operation of an infrared hot-electron transistor von CHOI, K. K, TAYSING-LARA, M, FOTIADIS, L, CHANG, W, IAFRATE, G. J

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Low dark current infrared hot-electron transistor for 77 K operation von Choi, K. K., Tidrow, M. Z., Taysing-Lara, M., Chang, W. H., Kuan, C. H., Farley, C. W., Chang, F.

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Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well von FOLKES, P. A, DUTTA, M, RUDIN, S, SHEN, H, ZHOU, W, SMITH, D. D, TAYSING-LARA, M, NEWMAN, P, COLE, M

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Femtosecond studies of excitonic optical non-linearities in GaAs/AlxGa1-xAs multiple quantum wells under in-plane uniaxial strain von WRABACK, M, SHEN, H, PAMULAPATI, J, DUTTA, M, NEWMAN, P. G, TAYSING-LARA, M, LU, X

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Flip Chip Bonding of 68 [Formula Omitted] 68 MWIR LED Arrays von Das, N.C, Taysing-Lara, M, Olver, K.A, Kiamilev, F, Prineas, J.P, Olesberg, J.T, Koerperick, E.J, Murray, L.M, Boggess, T.F

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Folkes et al. reply von Folkes, PA, Dutta, M, Rudin, S, Shen, H, Zhou, W, Smith, D, Taysing-Lara, M, Newman, P, Cole, M

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Folkes et al. reply von Folkes, PA, Dutta, M, Rudin, S, Shen, H, Zhou, W, Smith, D, Taysing-Lara, M, Newman, P, Cole, M

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Infrared absorption and photoconductive gain of quantum well infrared photodetectors von CHOI, K. K, FOTIADIS, L, TAYSING-LARA, M, CHANG, W, IAFRATE, G. J

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Line-shape analysis of reflectance spectra from GaAs/AlAs multiple-quantum-well structures von TERZIS, A. F, LIU, X. C, PETROU, A, MCCOMBE, B. D, DUTTA, M, SHEN, H, SMITH, D. D, COLE, M. W, TAYSING-LARA, M, NEWMAN, P. G

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Normal incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain von Pamulapati, J., Shen, H., Wraback, M., Taysing-Lara, M., Dutta, M., Luo, H.C., Lu, Y.

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Wavelength tuning and absorption line shape of quantum well infrared photodetectors von Choi, K. K., Taysing-Lara, M., Newman, P. G., Chang, W., Iafrate, G. J.

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