Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Po... von Tarauni, Yusuf U., Thiruvadigal, D. J., Hotoro, Maitama, Koki, Fatima Salmanu, Murugapandiyan, P.

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Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power swit... von Tarauni, Yusuf U., Thiruvadigal, D. John, Joseph, H. Bijo

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Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits von Tarauni, Yusuf U., Thiruvadigal, D. John, Joseph, Bijo, Mohanbabu, A.

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A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications von Murugapandiyan, P., Kalva, Sri Rama Krishna, Rajyalakshmi, V., Princy, B. Anni, Tarauni, Yusuf U., Fletcher, Augustine, Wasim, Mohd

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