Analog/RF Performance of Multichannel SOI MOSFET von Tao Chuan Lim, Bernard, E., Rozeau, O., Ernst, T., Guillaumot, B., Vulliet, N., Buj-Dufournet, C., Paccaud, M., Lepilliet, S., Dambrine, G., Danneville, F.

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Experimental Investigation of RF Noise Performance Improvement in Graded-Channel MOSFETs von Emam, M., Sakalas, P., Vanhoenacker-Janvier, D., Raskin, J.-P., Tao Chuan Lim, Danneville, F.

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RF Small-Signal Analysis of Schottky-Barrier p-MOSFET von Valentin, R., Dubois, E., Raskin, J.-P., Larrieu, G., Dambrine, G., Tao Chuan Lim, Breil, N., Danneville, F.

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Impact of Lateral Asymmetry of MOSFETs on the Gate-Drain Noise Correlation von Roy, A.S., Enz, C.C., Tao Chuan Lim, Danneville, F.

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The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance von Lim, Tao Chuan, Armstrong, G. Alastair

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MOSFETs RF Noise Optimization via Channel Engineering von Tao Chuan Lim, Valentin, R., Dambrine, G., Danneville, F.

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Scaling issues for analogue circuits using Double Gate SOI transistors von Lim, Tao Chuan, Armstrong, G. Alastair

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Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model? von Emam, Mostafa, Sakalas, Paulius, Vanhoenacker-Janvier, Danielle, Raskin, Jean-Pierre, Tao Chuan Lim, Danneville, Franois

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Parameter sensitivity for optimal design of 65 nm node double gate SOI transistors von TAO CHUAN LIM, ALASTAIR ARMSTRONG, G

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Source/Drain Extension Region Engineering in Nanoscale Double Gate MOSFETs for Low-Voltage Analog Applications von Abhinav Kranti, Tao Chuan Lim, Armstrong, G.A.

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First internal spacers' introduction in record high I-ON/I-OFF TiN/HfO2 gate multichannel MOSFET satisfying both high-performance and low standby power requirements von Bernard, E., Ernst, T., Guillaumot, B., Vulliet, N., Lim, T.C., Rozeau, O., Danneville, Francois, Coronel, P., Skotnicki, T., Deleonibus, S., Faynot, O.

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Impact of Lateral Asymmetry of MOSFETs on the GateaDrain Noise Correlation von Roy, A S, Enz, C C, Lim, Tao Chuan, Danneville, F

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High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO sub(2 gate stack) von Lim, Tao Chuan, Rozeau, Olivier, Buj, Christel, Paccaud, Michel, Lepilliet, Sylvie, Dambrine, Gilles, Danneville, Francois

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High frequency performance of sub-100nm UTB-FDSOI featuring TiN/HfO2 gate stack von Lim, Tao Chuan, Rozeau, Olivier, Buj, Christel, Paccaud, Michel, Lepilliet, Sylvie, Dambrine, Gilles, Danneville, François

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High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack: Special Issue with Papers Selected from the Ultimate Integration on Silicon Conference, Ulis 2008 von TAO CHUAN LIM, ROZEAU, Olivier, BUJ, Christel, PACCAUD, Michel, LEPILLIET, Sylvie, DAMBRINE, Gilles, DANNEVILLE, Francois

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High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO 2 gate stack von Lim, Tao Chuan, Rozeau, Olivier, Buj, Christel, Paccaud, Michel, Lepilliet, Sylvie, Dambrine, Gilles, Danneville, François

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Parameter sensitivity for optimal design of 65nm node double gate SOI transistors von Lim, Tao Chuan, Alastair Armstrong, G.

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First Internal Spacers' Introduction in Record High I/I\ \hbox Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements von Bernard, E., Ernst, T., Guillaumot, B., Vulliet, N., Tao Chuan Lim, Rozeau, O., Danneville, F., Coronel, P., Skotnicki, T., Deleonibus, S., Faynot, O.

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First Internal Spacers' Introduction in Record High [Formula Omitted] Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements von Bernard, E, Ernst, T, Guillaumot, B, Vulliet, N, Lim, Tao Chuan, Rozeau, O, Danneville, F, Coronel, P, Skotnicki, T, Deleonibus, S, Faynot, O

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First Internal Spacers' Introduction in Record High ION/IOFF TiN/HfO2 Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements von BERNARD, Emilie, ERNST, Thomas, FAYNOT, Olivier, GUILLAUMOT, Bernard, VULLIET, Nathalie, TAO CHUAN LIM, ROZEAU, Olivier, DANNEVILLE, Francois, CORONEL, Philippe, SKOTNICKI, Thomas, DELEONIBUS, Simon

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