Anomalous Poole-Frenkel mode of current-conduction mechanism in the P-I-N thin-film light-emitting diodes von Chingsungnoen, A., Kengkan, P., Tantraporn, W.

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Junction termination extension for near-ideal breakdown voltage in p-n junctions von Temple, V.A.K., Tantraporn, W.

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Multiple-zone single-mask junction termination extension-A high-yield near-ideal breakdown voltage technology von Tantraporn, W., Temple, V.A.K.

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Flexible GaAs ribbons von Tantraporn, W.

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Determination of Low Barrier Heights in Metal-Semiconductor Contacts von Tantraporn, W.

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Simple Measurement Technique for Voltage Dependent Capacitances von Tantraporn, W.

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Electron current through metal-insulator-metal sandwiches von Tantraporn, W.

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GaAs Schottky diode's lateral surface potential distribution von TANTRAPORN, W, MCCONNELL, M. D

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A New Technique for the Study of Electronic Transport in Insulators von Tantraporn, W.

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Self-aligned UMOSFET's with a specific on-resistance of 1 mΩ.cm2 von Chang, H.-R., Black, R.D., Temple, V.A.K., Tantraporn, W., Baliga, B.J.

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Reply to Simmons' comment: “On Tantraporn's determination of the electron effective mass in Al2O3” von Tantraporn, W.

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Reply to Dr. Stratton's comment: On approximate thermionic and field emission equations von Tantraporn, W.

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Extension of the C-V doping profile technique to study the movements of alloyed junction and substrate out-diffusion, the separation of junctions, and device area trimming von Tantraporn, W., Glover, G.H.

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On the study of metal-Semiconductor contacts von Tantraporn, W.

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Schottky Emission Through Thin Insulating Films von Emtage, P. R., Tantraporn, W.

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Ultralow resistance, selectively silicided VDMOS FETs for high-frequency power switching applications fabricated using sidewall oxide spacer technology von Shenai, K., Piacente, P.A., Saia, R., Korman, C.S., Tantraporn, W., Baliga, B.J.

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Reduction in the effective barrier height in PtSi-p-Si Schottky diodes by using low energy ion implantation von Wei, C.-Y., Tantraporn, W., Katz, W., Smith, G.

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A computer simulation scheme for various solid-state devices von Se Puan Yu, Tantraporn, W.

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Doping profile measurements from avalanche space−charge resistance: A new technique von Glover, G. H., Tantraporn, W.

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V-3 doping profile measurement from avalanche space-charge resistance: A new technique von Glover, G.H., Tantraporn, W.

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