Structural studies of reactively sputtered carbon nitride thin films von Kumar, Sunil, Tansley, T.L.

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Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions von Butcher, K.S.A, Afifuddin, Tansley, T.L, Brack, N, Pigram, P.J, Timmers, H, Prince, K.E, Elliman, R.G

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Growth and structure of CN thin films prepared by radio frequency reactive sputtering von Kumar, Sunil, Tansley, T.L.

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An instrumental solution to the phenomenon of negative capacitances in semiconductors von Butcher, K.S.A, Tansley, T.L, Alexiev, D

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The growth and properties of group III nitrides von Foxon, C.T., Cheng, T.S., Novikov, S.V., Lacklison, D.E., Jenkins, L.C., Johnston, D., Orton, J.W., Hooper, S.E., Baba-Ali, N., Tansley, T.L., Tret'yakov, V.V.

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Optical and electrical properties of InN grown by radio-frequency reactive sputtering von Motlan, Goldys, E.M., Tansley, T.L.

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Defects, optical absorption and electron mobility in indium and gallium nitrides von Tansley, T.L., Egan, R.J.

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Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500°C von Zhou, Bing, Li, Zin, Tansley, T.L., Butcher, K.S.A.

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Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields von Shi, Jun-jie, Tansley, T.L.

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Auger investigation of group III nitride films grown by molecular beam epitaxy von Novikov, S.V., Foxon, C.T., Cheng, T.S., Tansley, T.L., Orton, J.W., Lacklison, D.E., Johnston, D., Baba-Ali, N., Hooper, S.E., Jenkins, L.C., Eaves, L.

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InN, latest development and a review of the band-gap controversy von Butcher, K.S.A., Tansley, T.L.

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High energy Urbach characteristic observed for gallium nitride amorphous surface oxide von Chen, P.P.-T., Butcher, K.S.A., Goldys, E.M., Tansley, T.L., Prince, K.E.

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High-resolution X-ray photoelectron spectroscopy of Al Ga1−Sb von Ramelan, A.H, Butcher, K.S.A, Goldys, E.M, Tansley, T.L

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Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers von Butcher, K.S.A., Afifuddin, Chen, Patrick P.-T., Godlewski, M., Szczerbakow, A., Goldys, E.M., Tansley, T.L., Freitas, J.A.

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Piezoelectricity in indium nitride von Guy, I.L, Zheng, Z, Wintrebert-Fouquet, M, Butcher, K.S.A, Chen, P, Tansley, T.L

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Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD von Motlan, Goldys, E.M., Tansley, T.L.

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High-resolution X-ray photoelectron spectroscopy of AlxGa1−xSb von Ramelan, A.H, Butcher, K.S.A, Goldys, E.M, Tansley, T.L

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Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition von Motlan, Butcher, K.S.A., Goldys, E.M., Tansley, T.L.

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The effect of target nitridation on structural properties of InN grown by radio-frequency reactive sputtering von Motlan, Y, Goldys, E.M, Tansley, T.L

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Conduction mechanism in sputtered polycrystalline zinc oxide thin films von Tansley, T.L., Neely, D.F., Foley, C.P.

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