Optical and electrical properties of InN grown by radio-frequency reactive sputtering von Motlan, Goldys, E.M., Tansley, T.L.

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High energy Urbach characteristic observed for gallium nitride amorphous surface oxide von Chen, P.P.-T., Butcher, K.S.A., Goldys, E.M., Tansley, T.L., Prince, K.E.

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Structural studies of reactively sputtered carbon nitride thin films von Kumar, Sunil, Tansley, T.L.

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Elemental composition and microstructure of reactively sputtered carbon nitride thin films von Kumar, Sunil, Tansley, T. L.

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VARIABLE RANGE HOPPING IN POLYPYRROLE FILMS OF A RANGE OF CONDUCTIVITIES AND PREPARATION METHODS von MADDISON, DS, TANSLEY, TL

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Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers von Butcher, K.S.A., Afifuddin, Chen, Patrick P.-T., Godlewski, M., Szczerbakow, A., Goldys, E.M., Tansley, T.L., Freitas, J.A.

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Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD von Motlan, Goldys, E.M., Butcher, K.S.A., Tansley, T.L.

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Conductivity degradation in oxygen-aged polypyrrole von TANSLEY, T. L, MADDISON, D. S

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Nitrogen-rich indium nitride von Butcher, K. S. A., Wintrebert-Fouquet, M., Chen, P. P.-T., Tansley, T. L., Dou, H., Shrestha, S. K., Timmers, H., Kuball, M., Prince, K. E., Bradby, J. E.

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An instrumental solution to the phenomenon of negative capacitances in semiconductors von Butcher, K.S.A, Tansley, T.L, Alexiev, D

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Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition von RAMELAN, A. H, DROZDOWICZ-TOMSIA, K, GOLDYS, E. M, TANSLEY, T. L

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Structural characterization of reactively sputtered carbon nitride thin films with high nitrogen content von Kumar, S, Tansley, T L, Wielunski, L S

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Electron mobility in InAs1-xSbx and the effect of alloy scattering von CHIN, V. W. L, EGAN, R. J, TANSLEY, T. L

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Dielectric properties of AlN films prepared by laser-induced chemical vapour deposition von Li, X., Tansley, T.L., Chin, V.W.L.

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The influence of substrate on the self-organised island nucleation and morphology of metalorganic chemical vapour deposited GaSb von Subekti, A, Paterson, Melissa J, Goldys, E.M, Tansley, T.L

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Comment on the compositional dependence of bandgap in AlGaAs and band-edge discontinuities in AlGaAs-GaAs heterostructures von Giugni, S, Tansley, T L

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CARRIER CONCENTRATION AND COMPENSATION RATIO DEPENDENCE OF ELECTRON-DRIFT MOBILITY IN INAS1-XSBX von CHIN, VWL, EGAN, RJ, TANSLEY, TL

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Ohmic contacts to n-type and p-type GaSb von Subekti, A, Chin, V.W.L, Tansley, T.L

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Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at inte... von Godlewski, M, Holtz, P O, Bergman, J P, Monemar, B, Reginski, K, Bugajski, M, Goldys, E M, Tansley, T L

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Electronic Structures of Wurtzite GaN with Ga and N Vacancies von Chao, Pang, Jun-Jie, Shi, Yan, Zhang, Butcher, K. S. A, Tansley, T. L, Downes, J. E, Jia-Xiang, Shang

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