Electronic and excitonic properties of ultrathin (In,Ga)N layers: the role of alloy and monolayer width fluctuations von Tanner, Daniel S. P, Schulz, Stefan

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Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states von Tanner, Daniel S. P, Caro, Miguel A, O'Reilly, Eoin P, Schulz, Stefan

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Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wells von McMahon, Joshua M., Tanner, Daniel S. P., Kioupakis, Emmanouil, Schulz, Stefan

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Optimized Methodology for the Calculation of Electrostriction from First‐Principles von Tanner, Daniel S. P., Bousquet, Eric, Janolin, Pierre‐Eymeric

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Optimized Methodology for the Calculation of Electrostriction from First‐Principles von Tanner, Daniel S. P., Bousquet, Eric, Janolin, Pierre‐Eymeric

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Electronic structure evolution in dilute carbide Ge1−xCx alloys and implications for device applications von Broderick, Christopher A., Dunne, Michael D., Tanner, Daniel S. P., O’Reilly, Eoin P.

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Atomistic analysis of piezoelectric potential fluctuations in zinc-blende InGaN/GaN quantum wells: A Stillinger-Weber potential based analysis von Sheerin, Thomas P., Tanner, Daniel S. P., Schulz, Stefan

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Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals von Tanner, Daniel S. P., Caro, Miguel A., Schulz, Stefan, O'Reilly, Eoin P.

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Divergent electrostriction at ferroelectric phase transitions: example of strain-induced ferroelectiricty in KTaO3 von Tanner, Daniel S P, Pierre-Eymeric Janolin, Bousquet, Eric

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Polar (In,Ga)N/GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the "Green Gap" Problem von Tanner, Daniel S. P., Dawson, Philip, Kappers, Menno J., Oliver, Rachel A., Schulz, Stefan

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Electronic structure evolution in dilute carbide Ge1− x C x alloys and implications for device applications von Broderick, Christopher A., Dunne, Michael D., Tanner, Daniel S. P., O’Reilly, Eoin P.

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Optimized methodology for the calculation of electrostriction from first-principles von Tanner, Daniel S P, Bousquet, Eric, Pierre-Eymeric Janolin

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Interface Roughness, Carrier Localization, and Wave Function Overlap in c -Plane ( In , Ga ) N / Ga N Quantum Wells: Interplay of Well Width, Alloy Microstructure, Structural Inhom... von Tanner, Daniel S. P., McMahon, Joshua M., Schulz, Stefan

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Strain-engineered divergent electrostriction in KTaO3 von Tanner, Daniel, Pierre-Eymeric, Janolin, Bousquet, Eric

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Strain-engineered divergent electrostriction in KTaO 3 von Tanner, Daniel S. P., Janolin, Pierre-Eymeric, Bousquet, Eric

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Fully analytic valence force field model for the elastic and inner elastic properties of diamond and zincblende crystals von Tanner, Daniel S P, Caro, Miguel A, Schulz, Stefan, O'Reilly, Eoin P

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Comparison of first principles and semi-empirical models of the structural and electronic properties of Ge1-xSnx alloys von O’Halloran, Edmond J., Broderick, Christopher A., Tanner, Daniel S. P., Schulz, Stefan, O’Reilly, Eoin P.

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Hybrid functional study of nonlinear elasticity and internal strain in zinc-blende III-V materials von Tanner, Daniel S. P., Caro, Miguel A., Schulz, Stefan, O'Reilly, Eoin P.

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Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem von Tanner, Daniel S P, Dawson, Philip, Kappers, Menno J, Oliver, Rachel A, Schulz, Stefan

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Electronic structure evolution in dilute carbide Ge\(_{1-x}\)C\(_{x}\) alloys and implications for device applications von Broderick, Christopher A, Dunne, Michael D, Tanner, Daniel S P, O'Reilly, Eoin P

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