A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy von Tångring, I., Song, Y.X., Lai, Z.H., Wang, S.M., Sadeghi, M., Larsson, A.

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1.27 μm metamorphic InGaAs quantum well lasers on GaAs substrates von TANGRING, I, WANG, S, SADEGHI, M, LARSSON, A

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Low threshold current density 1.3 μm metamorphic InGaAs/GaAs quantum well laser diodes von WU, D, WANG, H, WANG, S. M, WU, B, NI, H, HUANG, S, XIONG, Y, WANG, P, HAN, Q, NIU, Z, TANGRING, I

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Metamorphic growth of 1.25–1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy von Tångring, I., Wang, S.M., Sadeghi, M., Larsson, A., Wang, X.D.

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Metamorphic InGaAs quantum wells for light emission at 1.3–1.6 μm von Wang, S.M., Tångring, I., Gu, Q.F., Sadeghi, M., Larsson, A., Wang, X.D., Ma, C.H., Buyanova, I.A., Chen, W.M.

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Optimization of 1.3 μm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy von Tångring, I., Wang, S.M., Sadeghi, M., Gu, Q.F., Larsson, A.

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1.58 μ m InGaAs quantum well laser on GaAs von Tångring, I., Ni, H. Q., Wu, B. P., Wu, D. H., Xiong, Y. H., Huang, S. S., Niu, Z. C., Wang, S. M., Lai, Z. H., Larsson, A.

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Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy von Wei, Y.Q., Wang, S.M., Wang, X.D., Zhao, Q.X., Sadeghi, M., Tångring, I., Larsson, A.

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Manipulation of strain relaxation in metamorphic heterostructures von Tångring, I., Wang, S. M., Zhu, X. R., Larsson, A., Lai, Z. H., Sadeghi, M.

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1.27mum metamorphic InGaAs quantum well lasers on GaAs substrates von Tangring, I, Wang, S, Sadeghi, M, Larsson, A

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1.27 mu m metamorphic InGaAs quantum well lasers on GaAs substrates von Tangring, I, Wang, S, Sadeghi, M, Larsson, A

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Metamorphic growth of 1.25-1.29mum InGaAs quantum well lasers on GaAs by molecular beam epitaxy von Tangring, I, Wang, S M, Sadeghi, M, Larsson, A, Wang, X D

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Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes von Wu, D, Wang, H, Wu, B, Ni, H, Huang, S, Xiong, Y, Wang, P, Han, Q, Niu, Z, Tangring, I, Wang, S M

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Optimization of 1.3 mum metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy von Tangring, I, Wang, S M, Sadeghi, M, Gu, Q F, Larsson, A

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Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs von Tangring, I., Wang, S.M., Larsson, A., Ni, H.Q., Wu, B.P., Wu, D.H., Xiong, Y.H., Huang, S.S., Niu, Z.C.

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Strong 1.3 - 1.6 μ m light emission from metamorphic InGaAs quantum wells on GaAs von Tångring, I., Wang, S. M., Gu, Q. F., Wei, Y. Q., Sadeghi, M., Larsson, A., Zhao, Q. X., Akram, M. N., Berggren, J.

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1.27 µm metamorphic InGaAs quantum well lasers on GaAs substrates von Tångring, I., Wang, S., Sadeghi, M., Larsson, A.

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1.27 µm metamorphic InGaAs quantum well lasers on GaAs substrates von Tångring, I, Wang, S, Sadeghi, M, Larsson, A

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Low threshold current density 1.3 µm metamorphic InGaAs/GaAs quantum well laser diodes von Wu, D, Wang, H, Wu, B, Ni, H, Huang, S, Xiong, Y, Wang, P, Han, Q, Niu, Z, Tångring, I, Wang, S M

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Low threshold current density 1.3 µm metamorphic InGaAs/GaAs quantum well laser diodes von Wu, D., Wang, H., Wu, B., Ni, H., Huang, S., Xiong, Y., Wang, P., Han, Q., Niu, Z., Tångring, I., Wang, S.M.

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