Effects of si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory von BAOWEI QIAO, JIE FENG, YUNFENG LAI, YUN LING, YINYIN LIN, TING'AO TANG, BINGCHU CAI, CHEN, Bomy

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Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory von YIN ZHANG, JIE FENG, ZUFA ZHANG, BINGCHU CAI, YINYIN LIN, TING'AO TANG, CHEN, Bomy

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Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer von Lv, Hangbing, Wan, Haijun, Tang, Tingao

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Multi-bit storage in reset process of Phase-change Random Access Memory (PRAM) von YI ZHANG, JIE FENG, YIN ZHANG, ZUFA ZHANG, YINYIN LIN, TING'AO TANG, BINGCHU CAI, CHEN, Bomy

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Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory von Lai, Yunfeng, Qiao, Baowei, Feng, Jie, Ling, Yun, Lai, Lianzhang, Lin, Yinyin, Tang, Ting’ao, Cai, Bingchu, Chen, Bomy

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The Role of CuAlO Interface Layer for Switching Behavior of Al/CuxO/Cu Memory Device von HANGBING LV, TINGAO TANG

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Performance improvement of Cu x O resistive switching memory by surface modification von Lv, Hangbing, Tang, Tingao

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The Role of CuAlO Interface Layer for Switching Behavior of Al/ \hbox\hbox/Cu Memory Device von Lv, Hangbing, Tang, Tingao

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Multi-bit storage in reset process of Phase Change Access Memory (PRAM) von Zhang, Yi, Feng, Jie, Zhang, Yin, Zhang, Zufa, Lin, Yinyin, Tang, Ting'ao, Cai, Bingchu, Chen, Bomy

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Study of Ge2Sb2Te5 Film for Nonvolatile Memory Medium von Baowei QIAO, Yunfeng LAI, Jie FENG, Yun LING, Yinyin LIN, Ting'ao TANG, Bingchu CAI, Bomy CHEN

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Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal--Oxide--Semiconductor Field-Effect Transistors von Mei, Guanghui, Hu, Guangxi, Hu, Shuyan, Gu, Jinglun, Liu, Ran, Tang, Tingao

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Performance improvement of CuxO resistive switching memory by surface modification von Lv, Hangbing, Tang, Tingao

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Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors von Mei, Guanghui, Hu, Guangxi, Hu, Shuyan, Gu, Jinglun, Liu, Ran, Tang, Tingao

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The Role of CuAlO Interface Layer for Switching Behavior of Al/ hbox Cu x hbox O /Cu Memory Device von Lv, Hangbing, Tang, Tingao

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The Role of CuAlO Interface Layer for Switching Behavior of Al/ [Formula Omitted]/Cu Memory Device von Lv, Hangbing, Tang, Tingao

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Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs von Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang

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Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study von Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu, Tingao Tang

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Phase-change memory device using Si-Sb-Te film for low power operation and multibit storage von BAOWEI QIAO, JIE FENG, YUNFENG LAI, YANFEI CAI, YINYIN LIN, TINGAO TANG, BINGCHU CAI, CHEN, Bomy

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A nano-scale-sized 3D element for phase change memories von Lv, Hangbing, Lin, Yinyin, Zhou, Peng, Tang, Tingao, Qiao, Baowei, Lai, Yunfeng, Feng, Jie, Chen, Bomy

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An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs von Ding, Zhihao, Hu, Guangxi, Gu, Jinglun, Liu, Ran, Wang, Lingli, Tang, Tingao

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