Ischemic Stroke in a Young Patient with Nephrotic Syndrome and Antiphospholipid Syndrome von Anita, B. M., Looi, I., Tang, A. S. N., Neoh, K. K.

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Mutations in MC1R Gene Determine Black Coat Color Phenotype in Chinese Sheep von Fang, Su-Li, Cheng, Shu-Ru, Wang, Yu-Tao, Lang, Xia, Fu, Dong-Li, Yang, Guang-Li, Luo, Yu-Zhu

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Ischemic Stroke in a Young Patient with Nephrotic Syndrome and Antiphospholipid Syndrome von Neoh, K K, Tang, A S N, Looi, I, Anita, B M

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Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis von Zhou, Deqiu, Ni, Yiqiang, He, Zhiyuan, Yang, Fan, Yao, Yao, Shen, Zhen, Zhong, Jian, Zhou, Guilin, Zheng, Yue, He, Liang, Wu, Zhisheng, Zhang, Baijun, Liu, Yang

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Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect von Armakavicius, Nerijus, Chen, Jr-Tai, Hofmann, Tino, Knight, Sean, Kühne, Philipp, Nilsson, Daniel, Forsberg, Urban, Janzén, Erik, Darakchieva, Vanya

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Analysis of the Hall-effect data on Mn-doped GaAs with taking into account the Hall factor for nearest-neighbor hopping conduction von Kajikawa, Yasutomo

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Generalised Joint Hypermobility in Caucasian Girls with Idiopathic Scoliosis: Relation with Age, Curve Size, and Curve Pattern von Czaprowski, Dariusz

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Oxygen Defects Mediated Magnetism of Ni Doped ZnO von Liu, W. J., Tang, X. D., Tang, Z., Bai, W., Tang, N. Y.

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High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN:Fe template von Chen, Yunfeng, Lu, Hai, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou

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Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots von Blumenthal, Sarah, Bürger, Matthias, Hildebrandt, Andre, Förstner, Jens, Weber, Nils, Meier, Cedrik, Reuter, Dirk, As, Donat J.

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Green laser diodes with low operation voltage obtained by suppressing carbon impurity in AlGaN: Mg cladding layer von Tian, Aiqin, Liu, Jianping, Zhang, Liqun, Ikeda, Masao, Zhang, Shuming, Li, Deyao, Fan, Xiaowang, Zhou, Kun, Wen, Pengyan, Zhang, Feng, Yang, Hui

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Deep ultraviolet lasing from AlGaN multiple-quantum-well structures von Yan, Jianchang, Tian, Yingdong, Chen, Xiang, Zhang, Yun, Wang, Junxi, Li, Jinmin

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Semi-polar (11-22) GaN grown on patterned (113) Si substrate von Yu, Xiang, Hou, Yaonan, Shen, Shuoheng, Bai, Jie, Gong, Yipin, Zhang, Yun, Wang, Tao

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Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells von Christian, George M., Hammersley, Simon, Davies, Matthew J., Dawson, Philip, Kappers, Menno J., Massabuau, Fabien C.-P., Oliver, Rachel A., Humphreys, Colin J.

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Growth and optical properties of gallium nitride film on glass substrates von An, Pingbo, Zhao, Lixia, Zhang, Shuo, Liu, Lei, Duan, Ruifei, Wei, Xuecheng, Lu, Hongxi, Wang, Junxi, Li, Jinmin

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InN/GaN short-period superlattices as ordered InGaN ternary alloys von Kusakabe, Kazuhide, Imai, Daichi, Wang, Ke, Yoshikawa, Akihiko

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Study of threshold voltage instability in E-mode GaN MOS-HEMTs von Iucolano, Ferdinando, Parisi, Antonino, Reina, Santo, Meneghesso, G., Chini, Alessandro

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Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures von Hammersley, Simon, Kappers, Menno J., Massabuau, Fabien C.-P., Sahonta, Suman-Lata, Dawson, Phil, Oliver, Rachel A., Humphreys, Colin J.

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Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV von Chowdhury, Sauvik, Guo, Zhibo, Liu, Xueqing, Chow, T. Paul

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Analysis of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer von Noda, Naohiro, Tsurumaki, Ryouhei, Horio, Kazushige

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