Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes von Li, Na, Tan, Teh Y., Gösele, U.

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Co-precipitation of carbon and oxygen in silicon : the dominant flux criterion von TAYLOR, W. J, GÖSELE, U. M, TAN, T. Y

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A nucleation-growth model of nanowires produced by the vapor-liquid-solid process von Li, Na, Li, Wenxuan, Liu, Lijun, Tan, Teh Y.

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Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process? von Tan, Teh Y., Li, Na, Gösele, Ulrich

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Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices von HORNG-MING YOU, GÖSELE, U. M, TAN, T. Y

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A model of Si diffusion in GaAs based on the effect of the Fermi level von YU, S, GOSELE, U. M, TAN, T. Y

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Crystallization of Amorphous SiO2 Microtubes Catalyzed by Lithium von Zhao, L., Li, N., Langner, A., Steinhart, M., Tan, T. Y., Pippel, E., Hofmeister, H., Tu, K.-N., Gösele, U.

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Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si von Joshi, Subhash M, Gösele, Ulrich M, Tan, Teh Y

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The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon von ROGERS, W. B, MASSOUD, H. Z, FAIR, R. B, GÖSELE, U. M, TAN, T. Y, ROZGONYI, G. A

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Thermodynamics of carbon in iron nanoparticles at low temperature: Reduced solubility and size-induced nucleation of cementite von Curtarolo, Stefano, Awasthi, Neha, Setyawan, Wahyu, Li, Na, Jiang, Aiqin, Tan, Teh Y., Mora, Elena, Bolton, Kim, Harutyunyan, Avetik R.

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Improvement of minority carrier diffusion length in Si by Al gettering von Joshi, Subhash M., Gösele, Ulrich M., Tan, Teh Y.

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Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs von Tan, Teh Y.

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Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs von Uematsu, Masashi, Werner, Peter, Schultz, Matthias, Tan, Teh Y., Gösele, Ulrich M.

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Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs von Chen, Chang-Ho, Gösele, Ulrich M., Tan, Teh Y.

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A study of Si outdiffusion from predoped GaAs von HORNG-MING YOU, GÖSELE, U. M, TAN, T. Y

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Liquid silicide formation of the Si wafer free surface during Ni diffusion at 1200 °C von JIANXING LI, WOUN-SUCK YANG, TAN, T. Y

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Enhancement of gold solubility in silicon wafers von LI, J, WOUN-SUCK YANG, TAN, T. Y

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Method of forming metal-disilicide layers and contacts von MCGUIRE, GARY E, TAN, TEH Y, LYNCH, WILLIAM T

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Ion-induced defects in semiconductors von Corbett, James W., Karins, James P., Tan, Teh Y.

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JAK-STAT and G-protein-coupled receptor signaling pathways are frequently altered in epitheliotropic intestinal T-cell lymphoma von Nairismägi, M-L, Tan, J, Lim, J Q, Nagarajan, S, Ng, C C Y, Rajasegaran, V, Huang, D, Lim, W K, Laurensia, Y, Wijaya, G C, Li, Z M, Cutcutache, I, Pang, W L, Thangaraju, S, Ha, J, Khoo, L P, Chin, S T, Dey, S, Poore, G, Tan, L H C, Koh, H K M, Sabai, K, Rao, H-L, Chuah, K L, Ho, Y-H, Ng, S-B, Chuang, S-S, Zhang, F, Liu, Y-H, Pongpruttipan, T, Ko, Y H, Cheah, P-L, Karim, N, Chng, W-J, Tang, T, Tao, M, Tay, K, Farid, M, Quek, R, Rozen, S G, Tan, P, Teh, B T, Lim, S T, Tan, S-Y, Ong, C K

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