The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate von Tsiaoussis, I., Frangis, N., Manolikas, C., Nguyen Tan, T.A.

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Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxy von CHERIEF, N, D'ANTERROCHES, C, CINTI, R. C, NGUYEN TAN, T. A, DERRIEN, J

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A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111) von Veuillen, J.-Y., Lollman, D.B.B., Nguyen Tan, T.A., Magaud, L.

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Surface mechanisms in O2 and SF6 microwave plasma etching of polymers von JOUBERT, O, PELLETIER, J, FIORI, C, NGUYEN TAN, T. A

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Interfacial reaction of erbium on homoepitaxial diamond (100) films von Saby, C., Nguyen Tan, T.A., Pruvost, F., Muret, P.

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Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111) von Ali, I., Muret, P., Nguyen Tan, T.A.

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Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grown on silicon von Kennou, S., Ladas, S., Grimaldi, M.G., Nguyen Tan, T.A., Veuillen, J.Y.

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Atomic structure of epitaxial Er silicides grown on Si(111) studied by surface extended X-ray absorption fine structure von Tuilier, M.-H., Pirri, C., Wetzel, P., Gewinner, G., Veuillen, J.-Y., Nguyen Tan, T.A.

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The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111) von LOLLMAN, D. B. B, NGUYEN TAN, T. A, VEUILLEN, J.-Y, MURET, P, LEFKI, K, BRUNEL, M, DUPUY, J. C

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Surface electronic structure of erbium silicide epitaxially grown on Si(111) von Veuillen, J.-Y., Magaud, L., Lollman, D.B.B., Nguyen Tan, T.A.

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A photoemission study of the interdiffusion of Si in Er films deposited on Si(111)(7 × 7) at room temperature von Lollman, D.B.B., Nguyen Tan, T.A., Veuillen, J.-Y.

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Characterization and electronic properties of the Tb/Si(111)7 × 7 interface von Kennou, S., Veuillen, J.-Y., Nguyen Tan, T.A.

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A physico-chemical study of all-sputtered Al/CdS interfaces von Bennouna, A., Azizan, M., Nguyen Tan, T.A., Brunel, M.

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Electronic structure of ErSi2 and YSi2 von MAGAUD, L, VEUILLEN, J. Y, LOLLMAN, D, NGUYEN TAN, T. A, PAPACONSTANTOPOULOS, D. A, MEHL, M. J

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Inverse photoemission study of nickel silicides von Azizan, M., Baptist, R., Chauvet, G., Nguyen Tan, T.A.

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Formation of the Fe-stepped Si(100) interface as studied by electron spectroscopy von Cherief, N, Veuillen, J.Y, Nguyen Tan, T.A, Cinti, R, Derrien, J

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Interface formation and epitaxy of CaF2 on CoSi2(111)-Si(111) von GUERFI, N, NGUYEN TAN, T. A, VEUILLEN, J. Y, CINTI, R

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Interfaces formed by evaporation of Si on Ni and Mo surfaces von Nguyen Tan, T.A., Azizan, M., Cinti, R.C., Chauvet, G., Baptist, R.

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Reactive Nb/Si(111) interfaces studied by electron spectroscopy von Azizan, M., Nguyen Tan, T.A., Cinti, R.C., Chauvet, G., Baptist, R.

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Carbide contacts on homoepitaxial diamond films von Muret, P, Pruvost, F, Saby, C, Lucazeau, E, Nguyen Tan, T.A, Gheeraert, E, Deneuville, A

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