Nanopore morphology in porous GaN template and its effect on the LEDs emission von Soh, C B, Tay, C B, Tan, Rayson J N, Vajpeyi, A P, Seetoh, I P, Ansah-Antwi, K K, Chua, S J

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Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate von Ansah Antwi, K. K., Soh, C. B., Wee, Q., Tan, Rayson J. N., Yang, P., Tan, H. R., Sun, L. F., Shen, Z. X., Chua, S. J.

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Red emitting LEDs formed by indium rich quantum dots incorporated in MQWs von Soh, C. B., Liu, W., Chua, S. J., Tan, Rayson J. N., Ang, S. S., Chow, S. Y.

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Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs von Soh, C B, Wang, B, Chua, S J, Lin, Vivian K X, Tan, Rayson J N, Tripathy, S

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Novel tunable phosphor-free white III-nitride light emitting diodes based on indium rich InGaN nanostructures von Soh, C. B., Liu, W., Chua, S. J., Teng, J. H., Tan, Rayson J. N., Ang, S. S.

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Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications von Ho, Jian-Wei, Tan, Rayson J.N., Heuken, Michael, Tay, Andrew A.O., Chua, Soo-Jin

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Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer von Soh, C. B., Liu, W., Chua, S. J., Ang, S. S., Tan, Rayson J. N., Chow, S. Y.

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