The application of polyimide/silicon nitride dual passivation to Al x Ga 1− x N/GaN high electron mobility transistors von Lau, W.S., Gunawan, S., Tan, Joy B.H., Singh, B.P.

Volltext

The application of polyimide/silicon nitride dual passivation to AlxGa1-xN/GaN high electron mobility transistors von LAU, W. S, GUNAWAN, S, TAN, Joy B. H, SINGH, B. P

Volltext

Effect of a trace of water vapor on Ohmic contact formation for AlGaN/GaN epitaxial wafers von Lau, W.S., Wong, W.T., Tan, Joy B.H., Singh, B.P.

Volltext

Dry etching of Al x Ga 1– x N/GaN by CCl 2 F 2 chemistry for device isolation von Lau, W.S., Singh, B.P., Tan, Joy B.H., Gunawan, S., Jiang, Y.Y., Wynn, Richard Thet, Lim, Vanissa S. W., Trigg, A.D.

Volltext

WSiN cap for Ohmic contacts to n-GaN with better morphology von Lau, W. S., Singh, B. P., Gunawan, S., Tan, Joy B. H., Jiang, Y. Y., Wynn, Richard Thet, Lim, Vanissa S. W., Trigg, A. D.

Volltext

Dry etching of AlxGa1-xN/GaN by CCl2F2 chemistry for device isolation von Lau, W.S., Singh, B.P., Tan, Joy B.H., Gunawan, S., Jiang, Y.Y., Wynn, Richard Thet, Lim, Vanissa S. W., Trigg, A.D.

Volltext