Degradation behaviors of nonylphenol ethoxylates by isolated bacteria using improved isolation method von GU, Xin, ZHANG, Yu, ZHANG, Jing, YANG, Min, Tamaki, Hideyuki, Kamagata, Yoichi

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New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor von Tamaki, Y., Ito, M., Hashino, M., Kawamoto, Y.

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New test structure for evaluating low-k dielectric interconnect layers by using ring-oscillators and metal comb/serpentine patterns von Tamaki, Y., Ito, M., Takimoto, Y., Hashino, M., Kawamoto, Y.

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Cavity Formation Due to Si3 N 4 / SiO2 Film‐Induced Stress in Silicon von Isomae, Seiichi, Tamaki, Yoichi

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Chemical effect on intensity ratios of K-series x-rays in vanadium, chromium and manganese compounds von Tamaki, Yoichi

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Cavity formation due to Si3N4/SiO2 film-induced stress in silicon von ISOMAE, S, TAMAKI, Y

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Impact of Silicon Surface Roughness on Device Performance and Novel Roughness Measurement Method von Nemoto, K., Watanabe, K., Hayashi, T., Tsugane, K., Tamaki, Y., Ota, H.

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New device structure using array transistors and flexible U-grooves suitable for 18-V, high-performance SOI complementary bipolar LSIs von Tamaki, Y., Tsuji, K., Otani, O., Nonami, H., Tomatsuri, T., Yoshida, E., Hamamoto, M., Nakazato, N.

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U-Groove Isolation Technology for High Density Bipolar LSI's von Tamaki, Yoichi, Kure, Tokuo, Shiba, Takeo, Higuchi, Hisayuki

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Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements von Kondo, M., Kobayashi, T., Tamaki, Y.

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Analysis of emitter efficiency enhancement induced by residual stress for in situ phosphorus-doped polysilicon emitter transistors von Kondo, M., Shiba, T., Tamaki, Y.

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Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part II: band deformation due to residual stress in the polysilicon emitter von Kondo, M., Kobayashi, T., Tamaki, Y.

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In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors von Shiba, T., Uchino, T., Ohnishi, K., Tamaki, Y.

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Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base von Uchino, T., Shiba, T., Kikuchi, T., Tamaki, Y., Watanabe, A., Kiyota, Y.

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A very small bipolar transistor technology with sidewall polycide base electrode for ECL-CMOS LSIs von Shiba, T., Tamaki, Y., Onai, T., Kiyota, Y., Kure, T., Nakamura, T.

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Effect of rapid epitaxy in in situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors von Shiba, T., Kondo, M., Uchino, T., Murakoshi, H., Tamaki, Y.

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Analysis of Chemical State by Means of X-Ray Spectra Induced by Electron Capture Decay von TAMAKI, YOICHI

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Semiconductor device von TAMAKI YOICHI, HAMAMOTO MASATO, NONAMI HIDEAKI

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Semiconductor device von Tamaki, Yoichi, Nonami, Hideaki, Hamamoto, Masato

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Advanced process device technology for 0.3- mu m high-performance bipolar LSIs von Tamaki, Y., Shiba, T., Kure, T., Ohyu, K., Nakamura, T.

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