Contribution of Mechanical Stresses to the Surface Relief Formation Under Laser Irradiation of Semiconductors von Sredin, V. G., Voitsekhovskii, A. V., Sakharov, M. V., Talipov, N. Kh

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FET on hydrogenated diamond surface von Gulyaev, Yu. V., Mityagin, A. Yu, Chucheva, G. V., Afanas’ev, M. S., Zyablyuk, K. N., Talipov, N. Kh, Nedosekin, P. G., Nabiev, A. E.

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Problem of fabrication of diamond-based high-power microwave FETs von Garber, G. Z., Dorofeev, A. A., Zubkov, A. M., Kolkovskii, Yu. V., Kontsevoi, Yu. A., Zyablyuk, K. N., Mityagin, A. Yu, Talipov, N. Kh, Chucheva, G. V.

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Ion Implantation in Narrow-Gap CdxHg1–xTe Solid Solutions von Talipov, N. Kh, Voitsekhovskii, A. V.

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Ion Implantation in Narrow-Gap Cd{sub x}Hg{sub 1–x}Te Solid Solutions von Talipov, N. Kh, Voitsekhovskii, A. V.

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A 128 × 128 pixel ultraviolet photodetector based on a diamond sensor von Feshchenko, V. S., Altukhov, A. A., Mityagin, A. Yu, Talipov, N. Kh, Shepelev, V. A.

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Ion Implantation in Narrow-Gap Cd x Hg1–x Te Solid Solutions von N. Kh. Talipov, Voitsekhovskii, A V

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High-Sensitive Two-Layer Photoresistors Based on p-Cd x Hg1–xTe with a Converted Near-Surface Layer von Ismailov, N. D., Talipov, N. Kh, Voitsekhovskii, A. V.

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High-Sensitive Two-Layer Photoresistors Based on p-CdxHg1–xTe with a Converted Near-Surface Layer von Ismailov, N. D., Talipov, N. Kh, Voitsekhovskii, A. V.

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Influence of high-power pulsed IR laser radiation on the electrophysical properties of [Cd.sub.x][Hg.sub.1-x]Te heteroepitaxial layers von Talipov, N. Kh

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Influence of High-Power Pulsed IR Laser Radiation on the Electrophysical Properties of Cd x Hg1– x Те Heteroepitaxial Layers von Talipov, N. Kh

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High-Sensitive Two-Layer Photoresistors Based on p-Cd x Hg1–x Te with a Converted Near-Surface Layer von Ismailov, N D, N. Kh. Talipov, Voitsekhovskii, A V

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Influence of High-Power Pulsed IR Laser Radiation on the Electrophysical Properties of CdxHg1–xТе Heteroepitaxial Layers von Talipov, N. Kh

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Ultraviolet photodetectors based on natural diamond von Altukhov, A. A., Klochkova, A. M., Mityagin, A. Yu, Orlova, G. A., Polyakov, V. I., Talipov, N. Kh, Feshchenko, V. S.

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Effect of the graded-gap layer composition on the formation of [n.sup.+]-[n.sup.-]-p structures in boron-implanted heteroepitaxial [Cd.sub.x][Hg.sub.1-x]Te layers von Talipov, N. Kh, Voitsekhovskii, A.V, Grigor'ev, D.V

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Low-Temperature Activation of Ion-Implanted Boron and Nitrogen Ions in CdxHg1–xTe Heteroepitaxial Layers von Voitsekhovskii, A. V., Talipov, N. Kh

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Low-Temperature Activation of Ion-Implanted Boron and Nitrogen Ions in Cd x Hg1–x Te Heteroepitaxial Layers von Voitsekhovskii, A. V., Talipov, N. Kh

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The effect of boron implantation modes on the parameters of photodiodes produced in the [Cd.sub.x][Hg.sub.1-x]Te heteroepitaxial structures von Voitsekhovskii, A.V, Nikitin, M.S, Talipov, N. Kh

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Effect of the Graded-Gap Layer Composition on the Formation of n + –n − –p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1–x Te Layers von Talipov, N. Kh, Voitsekhovskii, А. V., Grigor’ev, D. V.

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The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE von Voitsekhovskii, A. V., Korotaev, A. G., Kokhanenko, A. P., Grigor’ev, D. V., Varavin, V. S., Dvoretskii, S. A., Sidorov, Yu. G., Mikhailov, N. N., Talipov, N. Kh

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