InAs and InAsSb LEDs with built-in cavities von Aidaraliev, M, Zotova, N V, Il'inskaya, N D, Karandashev, S A, Matveev, B A, Remennyi, M A, Stus', N M, Talalakin, G N

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Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys von Aydaraliev, M, Zotova, N V, Karandashov, S A, Matveev, B A, Stus', N M, Talalakin, G N

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6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm von Aydaraliev, M., Zotova, N. V., Karandashov, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Bewley, W. W., Lindle, J. R., Meyer, J. R.

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Radiation recombination in InAsSb/InAsSbP double heterostructures von Aydaraliev, M, Bresler, M S, Gusev, O B, Karandashov, S A, Matveev, B A, Stus, M N, Talalakin, G N, Zotova, N V

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Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors von Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics von Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Shustov, V. V., Kuznetsov, V. V., Kognovitskaya, E. A.

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Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate von Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Shustov, V. V.

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Negative luminescence in p-InAsSbP/n-InAs diodes von Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm von Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm) von Aydaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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Optically pumped mid-infrared InGaAs(Sb) LEDs von Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Shustov, V. V.

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Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors von Aidaraliev, M., Zotova, N.V., Karandashov, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.

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Spontaneous and stimulated emission from InAsSbP/InAs heterostructures von Aidaraliev, M., Zotova, N. V., Karandashov, S. A., Matveev, B. A., Stus, N. M., Talalakin, G. N.

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Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range von Remennyi, M.A., Zotova, N.V., Karandashev, S.A., Matveev, B.A., Stus’, N.M., Talalakin, G.N.

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Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm) von Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Beyer, T., Brunner, R.

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InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy von Aidaraliev, M., Beyer, T., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers von Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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Tunable mid-IR diode lasers based on InGaAsSb/InAsSbP DH von Zotova, N.V., Karan-ov, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N., Remennyi, M.A.

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InAs-based laser double heterostructures with p-n junction in the active region von Bresler, M.S., Gusev, O.B., Zotova, N.V., Aydaraliev, M., Karandashev, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.

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Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures von Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remenny, M. A., Stus’, N. M., Talalakin, G. N.

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