Converse Magnetoelectric Effect in Epitaxial Co₂MnSi/Pb(Mg1/3Nb2/3)O₃-PbTiO₃ Multiferroic Heterostructures von Usami, Takamasa, Fujii, Shumpei, Yamada, Shinya, Shiratsuchi, Yu, Kanashima, Takeshi, Nakatani, Ryoichi, Hamaya, Kohei

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Enhancement of electrical properties in polycrystalline BiFeO3 thin films von Yun, Kwi Young, Ricinschi, Dan, Kanashima, Takeshi, Okuyama, Masanori

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Author Correction: Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSi von Fujii, Shumpei, Usami, Takamasa, Shiratsuchi, Yu, Kerrigan, Adam M., Yatmeidhy, Amran Mahfudh, Yamada, Shinya, Kanashima, Takeshi, Nakatani, Ryoichi, Lazarov, Vlado K., Oguchi, Tamio, Gohda, Yoshihiro, Hamaya, Kohei

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Inverse local magnetoresistance effect up to room temperature in ferromagnet-semiconductor lateral spin-valve devices von Naito, Takahiro, Yamada, Michihiro, Yamada, Shinya, Kanashima, Takeshi, Sawano, Kentarou, Hamaya, Kohei

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Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film von Kanashima, Takeshi, Katsura, Yuu, Okuyama, Masanori

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Structural and ferroelectric properties of epitaxial Bi5Ti3FeO15 and natural-superlattice-structured Bi4Ti3O12–Bi5Ti3FeO15 thin films von Nakashima, Seiji, Fujisawa, Hironori, Ichikawa, Satoshi, Park, Jung Min, Kanashima, Takeshi, Okuyama, Masanori, Shimizu, Masaru

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(Invited) Finely Controlled Heterointerfaces between Ge(111) and Metallic Alloys or Insulators for Next Generation Ge-Based Devices von Hamaya, Kohei, Yamada, Shinya, Kasahara, Kenji, Kanashima, Takeshi

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Theoretical analysis of fluorine-passivated germanium surface for high- k/Ge gate stack by molecular orbital method von Lee, DongHun, Lee, Hyun, Kanashima, Takeshi, Okuyama, Masanori

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Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride--tetrafluoroethylene) and Pentacene Thin Films von Kanashima, Takeshi, Yabe, Kazuki, Okuyama, Masanori

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Ferroelectric and Piezoelectric Properties of Polycrystalline BiFeO3 Thin Films Prepared by Pulsed Laser Deposition under Magnetic Field von Park, Jung Min, Nakashima, Seiji, Sohgawa, Masayuki, Kanashima, Takeshi, Okuyama, Masanori

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Air damping effect on the air-based CMUT operation von Cha, Bu-Sang, Kanashima, Takeshi, Lee, Seung-Mok, Okuyama, Masanori

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Fabrication and Characterization of Ferroelectric Poly(vinylidene fluoride--tetrafluoroethylene) Gate Field-Effect Transistor Memories von Watanabe, Tomohiro, Miyashita, Hiroyuki, Kanashima, Takeshi, Okuyama, Masanori

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Synergistic information encoding by combinatorial pulse operation of ferroelectrics von Ricinschi, Dan, Nicastro, Damian, Kanashima, Takeshi, Okuyama, Masanori

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Influences of perforation ratio in characteristics of capacitive micromachined ultrasonic transducers in air von Cha, Bu-Sang, Lee, Seung-Mok, Kanashima, Takeshi, Okuyama, Masanori, Tanaka, Tsunehisa

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Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements von Lee, DongHun, Kubo, Kazuki, Kanashima, Takeshi, Okuyama, Masanori

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Ferroelectric and structural properties of stress-constrained and stress-relaxed polycrystalline BiFeO3 thin films von Nakashima, Seiji, Ricinschi, Dan, Park, Jung Min, Kanashima, Takeshi, Fujisawa, Hironori, Shimizu, Masaru, Okuyama, Masanori

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Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements von Lee, DongHun, Kubo, Kazuki, Kanashima, Takeshi, Okuyama, Masanori

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Multiferroic properties of polycrystalline Zn-substituted BiFeO₃ thin films prepared by pulsed laser deposition von Park, Jung Min, Gotoda, Fumiya, Nakashima, Seiji, Kanashima, Takeshi, Okuyama, Masanori

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Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride–tetrafluoroethylene) and Pentacene Thin Films von Kanashima, Takeshi, Yabe, Kazuki, Okuyama, Masanori

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Preparation of BiFe0.9Co0.1O3 Films by Pulsed Laser Deposition under Magnetic Field von Park, Jung Min, Gotoda, Fumiya, Nakashima, Seiji, Sohgawa, Masayuki, Kanashima, Takeshi, Okuyama, Masanori

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