Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure von Kan, Shin-ichi, Takemoto, Shu, Kaneko, Kentaro, Takahashi, Isao, Sugimoto, Masahiro, Shinohe, Takashi, Fujita, Shizuo

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Hierarchical hardware trojan for LUT‐based AI devices and its evaluation von Nozaki, Yusuke, Takemoto, Shu, Ikezaki, Yoshiya, Yoshikawa, Masaya

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AI hardware oriented neural network physical unclonable function and its evaluation von Nozaki, Yusuke, Shibagaki, Kazuya, Takemoto, Shu, Yoshikawa, Masaya

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Multiple countermeasures on unrolled architecture PRINCE against power analysis and its evaluation von Takemoto, Shu, Nozaki, Yusuke, Yoshikawa, Masaya

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Evaluation of band alignment of α-Ga 2 O 3 /α-(Al x Ga 1− x ) 2 O 3 heterostructures by X-ray photoelectron spectroscopy von Uchida, Takayuki, Jinno, Riena, Takemoto, Shu, Kaneko, Kentaro, Fujita, Shizuo

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Evaluation of band alignment of α-Ga^sub 2^O^sub 3^/α-(Al ^sub x^ Ga^sub 1− x^ )^sub 2^O^sub 3^ heterostructures by X-ray photoelectron spectroscopy von Uchida, Takayuki, Jinno, Riena, Takemoto, Shu, Kaneko, Kentaro, Fujita, Shizuo

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Evaluation of band alignment of α-Ga2O3/α-(AlxGa1−x)2O3 heterostructures by X-ray photoelectron spectroscopy von Uchida, Takayuki, Jinno, Riena, Takemoto, Shu, Kaneko, Kentaro, Fujita, Shizuo

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Fabrication of α-Ga2O3 thin films with low surface roughness for device applications von Uchida, Takayuki, Jinno, Riena, Takemoto, Shu, Kaneko, Kentaro, Fujita, Shizuo

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Fabrication of Si doped α-Ga2O3 for device applications von Uchida, Takayuki, Jinno, Riena, Takemoto, Shu, Kaneko, Kentaro, Fujita, Shizuo

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Rectification Properties of α-Ir2O3/α-Ga2O3 pn junction diodes von Kaneko, Kentaro, Takemoto, Shu, Kan, Shin-ichi, Takahashi, Isao, Sugimoto, Masahiro, Shinohe, Takashi, Fujita, Shizuo

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Fabrication of iridium oxide thick films with p-type conductivity and their electrical properties von Takemoto, Shu, Kan, Shinichi, Kaneko, Kentaro, Hitora, Toshimi, Fujita, Shizuo

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Fabrication and electrical property analysis of Si doped α-Ga2O3 von Uchida, Takayuki, Jinno, Riena, Takemoto, Shu, Kaneko, Kentaro, Fujita, Shizuo

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Fabrication of Sn doped α-(AlxGa1-x)2O3 Thin Films and Measurements of Electron Spin Resonance von Takemoto, Shu, Uchida, Takayuki, Jinno, Riena, Kaneko, Kentaro, Tanaka, Katsuhisa, Fujita, Shizuo

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p型α-Ir2O3 / n型α-Ga2O3の整流特性 von 金子, 健太郎, 竹本, 柊, 韓, 欣一, 高橋, 勲, 杉本, 雅裕, 四戸, 孝, 藤田, 静雄

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デバイス化に向けた低表面ラフネスα-Ga2O3薄膜の作製 von 内田, 貴之, 神野, 莉衣奈, 竹本, 柊, 金子, 健太郎, 藤田, 静雄

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p型伝導酸化イリジウム薄膜の厚膜化とその電気特性 von 竹本, 柊, 韓, 欣一, 金子, 健太郎, 人羅, 俊実, 藤田, 静雄

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デバイス化に向けたSiドープα-Ga2O3薄膜の作製 von 内田, 貴之, 神野, 莉衣奈, 竹本, 柊, 金子, 健太郎, 藤田, 静雄

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Siドープα-Ga2O3薄膜の作製とその電気特性解析 von 内田, 貴之, 神野, 莉衣奈, 竹本, 柊, 金子, 健太郎, 藤田, 静雄

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Snドープα-(AlxGa1-x)2O3薄膜の作製とESR測定 von 竹本, 柊, 内田, 貴之, 神野, 莉絵奈, 金子, 健太郎, 田中, 勝久, 藤田, 静雄

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Effectiveness of SARS‐CoV‐2 vaccines on hemodialysis patients in Japan: A nationwide cohort study von Kikuchi, Kan, Nangaku, Masaomi, Ryuzaki, Munekazu, Yamakawa, Tomoyuki, Yoshihiro, Ota, Hanafusa, Norio, Sakai, Ken, Kanno, Yoshihiko, Ando, Ryoichi, Shinoda, Toshio, Wakino, Shu, Nakamoto, Hidetomo, Takemoto, Yoshiaki, Akizawa, Tadao

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