Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC von Sometani, Mitsuru, Okamoto, Dai, Harada, Shinsuke, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo, Takei, Manabu, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime

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Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC von Harada, Shinsuke, Takei, Manabu, Sometani, Mitsuru, Okamoto, Dai, Yonezawa, Yoshiyuki, Okumura, Hajime, Fukuda, Kenji, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo

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Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide von Tanaka, Yasunori, Okumura, Hajime, Yonezawa, Yoshiyuki, Kojima, Takahito, Harada, Shinsuke, Ariyoshi, Keiko, Senzaki, Junji, Takei, Manabu

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Evaluation of Schottky barrier height on 4H-SiC m-face for Schottky barrier diode wall integrated trench MOSFET von Kobayashi, Yusuke, Ishimori, Hiroshi, Kinoshita, Akimasa, Kojima, Takahito, Takei, Manabu, Kimura, Hiroshi, Harada, Shinsuke

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Development of Ultrahigh-Voltage SiC Devices von Fukuda, Kenji, Okamoto, Dai, Okamoto, Mitsuo, Deguchi, Tadayoshi, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Harada, Shinsuke, Tanaka, Yasunori, Yonezawa, Yoshiyuki, Kato, Tomohisa, Katakami, Shuji, Arai, Manabu, Takei, Manabu, Matsunaga, Shinichiro, Takao, Kazuto, Shinohe, Takashi, Izumi, Toru, Hayashi, Toshihiko, Ogata, Syuuji, Asano, Katsunori, Okumura, Hajime, Kimoto, Tsunenobu

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Ultrahigh-temperature oxidation of 4H-SiC(0001) and an impact of cooling process on SiO2/SiC interface properties von Hosoi, Takuji, Nagai, Daisuke, Sometani, Mitsuru, Shimura, Takayoshi, Takei, Manabu, Watanabe, Heiji

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POWER CONVERSION APPARATUS AND BIDIRECTIONAL SWITCH von TAKEI, Manabu

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Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs von Fujisawa, Hiroyuki, Ishimori, Hitoshi, Arai, Manabu, Deguchi, Tadayoshi, Okumura, Hajime, Fukuda, Kenji, Katakami, Shuji, Takei, Manabu, Takasu, Shinji, Takenaka, Kensuke, Yonezawa, Yoshiyuki

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High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode von Asano, Katsunori, Takenaka, Kensuke, Yoshikawa, Mitsuru, Hemmi, Tetsuro, Tanaka, Atsushi, Mizushima, Tomonori, Ogata, Shuji, Hayashi, Toshihiko, Tanaka, Yasunori, Okumura, Hajime, Nakayama, Koji, Fujisawa, Hiroyuki, Fukuda, Kenji, Takei, Manabu, Yonezawa, Yoshiyuki, Okamoto, Dai, Izumi, Toru

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POWER CONVERSION DEVICE AND BI-DIRECTIONAL SWITCH von TAKEI Manabu

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DB (Dielectric Barrier) IGBT with extreme injection enhancement von Takei, Manabu, Fujikake, Shinji, Nakazawa, Haruo, Naito, Tatsuya, Kawashima, Tomoyuki, Shimoyama, Kazuo, Kuribayashi, Hitoshi

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Method of manufacturing silicon carbide semiconductor device von Takei Manabu

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METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE von TAKEI Manabu

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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE von BABA, Masakazu, HARADA, Shinsuke, TAKEI, Manabu

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Evaluation of crystalline dislocations of 4H-SiC single crystal substrate by observation of birefringence image von Takenaka, Kensuke, Kato, Tomohisa, Matsunaga, Tatsuya, Takei, Manabu, Yonezawa, Yoshiyuki, Okumura, Hajime

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Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device, and method of controlling silicon carbide semiconductor device von Takei, Manabu, Yamada, Ryuji

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SILICON CARBIDE SEMICONDUCTOR DEVICE von BABA, Masakazu, HARADA, Shinsuke, OKADA, Masakazu, TAKEI, Manabu

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MOUNTING METHOD AND MOUNTING DEVICE FOR FLEXIBLE SUBSTRATE von TAKEI MANABU

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THIN FILM TRANSISTOR AND DISPLAY PANEL von TAKEI MANABU

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MOS SEMICONDUCTOR DEVICE von TAKEI MANABU

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