Development of a laser chipping technique combined with water jet for retrieval of fuel debris at Fukushima Daiichi Nuclear Power Station von Yamada, Tomonori, Takebe, Toshihiko, Ishizuka, Ippei, Daido, Hiroyuki, Hanari, Toshihide, Shibata, Takuya, Ohmori, Shinya, Kurosawa, Koichi, Sasaki, Go, Nakada, Masahiro, Sakai, Hideaki

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Electrical characterization of lateral P-N junctions grown on (111)A GaAs nonplanar substrates by molecular beam epitaxy von INAI, M, YAMAMOTO, T, FUJII, M, TAKEBE, T, KOBAYASHI, K

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Low diffusivity of dopants in (111)A GaAs von SHINODA, A, YAMAMOTO, T, INAI, M, TAKEBE, T, WATANABE, T

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Substrate misorientation effects on silicon-doped AlGaAs layers grown on GaAs(111)A by molecular beam epitaxy von FUJITA, K, YAMAMOTO, T, TAKEBE, T, WATANABE, T

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Misorientation dependence of crystal structures and electrical properties of Si-doped AlAS grown on (111)A GaAs by molecular beam epitaxy von YAMAMOTO, T, INAI, M, SHINODA, A, TAKEBE, T, WATANABE, T

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Low resistance NiAuGe/Au ohmic contacts on N-type (111)A GaAs von LOVELL, D. R, TAKEBE, T, YAMAMOTO, T, INAI, M, KOBAYASHI, K, WATANABE, T

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Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV-Xa calculations von Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Iihara, Junji, Nanba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D, Perera, Rupert C C

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Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV-Xalpha calculations von Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Iihara, Junji, Nanba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D, Perera, Rupert C C

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Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV-Xα calculations von Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Iihara, Junji, Nanba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D., Perera, Rupert C. C.

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LED mit fluoreszierendem Substrat von MOTOKI, KENSAKU, MATSUBARA, HIDEKI, TAKEBE, TOSHIHIKO

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LED ELEMENT WITH LIGHT EMITTING SUBSTRATE von MATSUBARA HIDEKI, TAKEBE TOSHIHIKO

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JP2783203B von TAKEBE TOSHIHIKO, KYAMA MAKOTO

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METHOD FOR EVALUATING SEMI-INSULATIVE GAAS SUBSTRATE von YOSHIDA HIROAKI, TAKEBE TOSHIHIKO

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SCHOTTKY ELECTRODE AND FORMATION THEREOF von KIYAMA MAKOTO, TAKEBE TOSHIHIKO

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White color light emitting diode and neutral colorlight emitting diode von TOSHIHIKO TAKEBE, KOJI KATAYAMA, HIDEKI MATSUBARA

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PROBE OF PROBE CARD von KIYAMA MAKOTO, TAKEBE TOSHIHIKO

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Substrate-fluorescent LED von MATSUBARA HIDEKI, TAKEBE TOSHIHIKO, MOTOKI KENSAKU

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Substrate-fluorescent LED von Matsubara, Hideki, Takebe, Toshihiko, Motoki, Kensaku

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EVALUATING METHOD FOR ELECTRIC CHARACTERISTIC OF BUFFER LAYER von SHIRAKAWA FUTATSU, TAKEBE TOSHIHIKO

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Cathodoluminescence study of AlGaAs/GaAs multilayers grown on ridge‐type triangles on GaAs (111)A substrates von Sekiguchi, Takashi, Sakuma, Yoshiki, Takebe, Toshihiko

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