Nonlinear Steady-State III-V FET Model for Microwave Antenna Switch Applications von Takatani, S., Cheng-Duan Chen

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Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level von Kikawa, Takeshi, Takatani, Shinichiro, Tanoue, HiroshiMasuda

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Atomic hydrogen cleaning of GaAs and InP surfaces studied by photoemission spectroscopy von Kikawa, Takeshi, Ochiai, Isao, Takatani, Shinichiro

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Compound semiconductor heterojunction bipolar transistor von Takatani, Shinichiro

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COMPOUND SEMICONDUCTOR HETEROJUNCTION BIPOLAR TRANSISTOR von Takatani, Shinichiro

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Digital etching of GaAs using Se molecular beam and atomic hydrogen beam von Takatani, Shinichiro, Kikawa, Takeshi

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Mechanism of TiN barrier-metal oxidation in a ferroelectric random access memory von Kushida-Abdelghafar, Keiko, Torii, Kazuyoshi, Takatani, Shinichiro, Matsui, Yuichi, Fujisaki, Yoshihisa

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FIELD-EFFECT TRANSISTOR DEVICE von SHIROTA, Riichiro, TAKATANI, Shinichiro

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ArF-Excimer-Laser-Assisted Highly Selective Etching of InGaAs/InAlAs Using HBr and F 2 Gas Mixture von Takazawa, Hiroyuki, Shinichiro Takatani, Shinichiro Takatani, Seiji Yamamoto, Seiji Yamamoto

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Vertical nitride semiconductor transistor device von Shirota, Riichiro, Takatani, Shinichiro

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Normally-off nitride semiconductor transistor device von Shirota, Riichiro, Takatani, Shinichiro

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VERTICAL NITRIDE SEMICONDUCTOR TRANSISTOR DEVICE von Shirota, Riichiro, Takatani, Shinichiro

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Fabrication of InAlAs/InGaAs high-electron-mobility transistors using ArF-excimer-laser-assisted damage-free highly selective InGaAs/InAlAs etching von TAKAZAWA, H, TAKATANI, S, HIGUCHI, K, KUDO, M

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Electronic properties of Se-treated SiO2/GaAs interfaces von KIKAWA, T, TAKATANI, S, TEZEN, Y

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GaN High Electron Mobility Transistor with Floating Gate for Accurate Threshold Voltage Control von Kosaka, Hayato, Iwata, Hiroki, Watariguchi, Yudai, Shirota, Riichiro, Amemiya, Yoshiteru, Takatani, Shinichiro, Suwa, Tomoyuki, Teramoto, Akinobu

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Evidence of Ga2Se3-related compounds on Se-stabilized GaAs surfaces von TAKATANI, S, NAKANO, A, OGATA, K, KIKAWA, T

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NITRIDE SEMICONDUCTOR TRANSISTOR DEVICE von SHIROTA, Riichiro, TAKATANI, Shinichiro

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Compound semiconductor heterojunction bipolar transistor von TAKATANI, SHINICHIRO

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SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR von ZOU, Daohua, TAKATANI, Shinichiro

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High-Performance HEMT with an Offset-Gate Structure for Millimeter-Wave Monolithic Microwave ICs von Ohta, Hiroshi, Tanimoto, Takuma, Ohbu, Isao, Higuchi, Katsuhiko, Takatani, Shinichiro, Kurita, Naoyuki, Kamozaki, Keigo, Kondoh, Hiroshi

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