Matrix and element dependences of useful yield in Si and SiO2 matrices using laser-ionization sputtered neutral mass spectrometry von Saito, Reiko, Akutsu, Haruko, Asakawa, Jun, Takeno, Shiro, Kiyokawa, Kei, Nagashima, Satoru, Ishikawa, Takeharu, Kashiwagi, Takahiro, Takano, Akio, Sakamoto, Tetsuo, Fujii, Masaaki

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A new vector frequency modulation method for power conversion circuits von Takano, Akio

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Evaluation of sputtering rate change in the silicon transient region under medium energy O2+ sputtering von Takano, Akio, Takenaka, Hisataka

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Final report on VAMAS round-robin study to evaluate a correction method for saturation effects in DSIMS von Takano, Akio, Nonaka, Hidehiko, Homma, Yoshikazu, Tomita, Mitsuhiro, Murase, Atsushi, Hayashi, Syunichi, Barozzi, Mario, Kim, Kyung Joon, Sykes, David, Simons, David, Bennett, Joe, Magee, Charles W.

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Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices von Shimizu, Yasuo, Uematsu, Masashi, Itoh, Kohei M., Takano, Akio, Sawano, Kentarou, Shiraki, Yasuhiro

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Direct effects of short‐term psychoeducational intervention for relatives of patients with schizophrenia in Japan von YAMAGUCHI, HAJIME, TAKAHASHI, AKIHISA, TAKANO, AKIO, KOJIMA, TAKUYA

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Development of a Certified Reference Material with Delta-Doped Boron Nitride Layers for Surface Depth-Profile Analysis von Kurokawa, Akira, Azuma, Yasushi, Terauchi, Shinya, Takatsuka, Toshiko, Narukawa, Tomohiro, Takano, Akio, Mizuno, Seiichiro, Sameshima, Junichiro

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International Standardization of S-SIMS Quantitative Analysis of Binary Organic Mixtures with Relative Sensitivity Factor Method von Takano, Akio, Kurokawa, Akira, Aoyagi, Satoka

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Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices von Shimizu, Yasuo, Uematsu, Masashi, Itoh, Kohei M., Takano, Akio, Sawano, Kentarou, Shiraki, Yasuhiro

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Evaluation of the dead time of the detector on SIMS von Takano, Akio

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International Standardization of S-SIMS Quantitative Analysis of Binary Organic Mixtures with Relative Sensitivity Factor Method von Takano, Akio, Kurokawa, Akira, Aoyagi, Satoka

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Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices von Shimizu, Yasuo, Takano, Akio, Uematsu, Masashi, Itoh, Kohei M.

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Quantitative and Qualitative Analyses of Mass Spectra of OEL Materials by Artificial Neural Network and Interface Evaluation: Results from a VAMAS Interlaboratory Study von Aoyagi, Satoka, Cant, David J. H., Dürr, Michael, Eyres, Anya, Fearn, Sarah, Gilmore, Ian S., Iida, Shin-ichi, Ikeda, Reiko, Ishikawa, Kazutaka, Lagator, Matija, Lockyer, Nicholas, Keller, Philip, Matsuda, Kazuhiro, Murayama, Yohei, Okamoto, Masayuki, Reed, Benjamen P., Shard, Alexander G., Takano, Akio, Trindade, Gustavo F., Vorng, Jean-Luc

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Evaluation of Time-of-Flight Secondary Ion Mass Spectrometry Spectra of Peptides by Random Forest with Amino Acid Labels: Results from a Versailles Project on Advanced Materials an... von Aoyagi, Satoka, Fujiwara, Yukio, Takano, Akio, Vorng, Jean-Luc, Gilmore, Ian S, Wang, Yung-Chen, Tallarek, Elke, Hagenhoff, Birgit, Iida, Shin-ichi, Luch, Andreas, Jungnickel, Harald, Lang, Yusheng, Shon, Hyun Kyong, Lee, Tae Geol, Li, Zhanping, Matsuda, Kazuhiro, Mihara, Ichiro, Miisho, Ako, Murayama, Yohei, Nagatomi, Takaharu, Ikeda, Reiko, Okamoto, Masayuki, Saiga, Kunio, Tsuchiya, Toshihiko, Uemura, Shigeaki

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AFM Tip Characterizer fabricated by Si/SiO2 multilayers von Takenaka, Hisataka, Hatayama, Masatoshi, Ito, Hisashi, Ohchi, Tadayuki, Takano, Akio, Kurosawa, Satoru, Itoh, Hiroshi, Ichimura, Shingo

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The Trend of the International Standardization of Secondary Ion Mass Spectrometry von Takano, Akio

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Development of a Certified Reference Material with Delta-Doped Boron Nitride Layers for Surface Depth-Profile Analysis von Kurokawa, Akira, Azuma, Yasushi, Terauchi, Shinya, Takatsuka, Toshiko, Narukawa, Tomohiro, Takano, Akio, Mizuno, Seiichiro, Sameshima, Junichiro

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Bevel depth profiling by high-spatial-resolution sputtered neutral mass spectrometry with laser postionization von Kashiwagi, Takahiro, Nagashima, Satoru, Ishikawa, Takeharu, Takano, Akio, Liu, Suet-Yi, Takenaka, Hisataka, Endo, Katsumi, Fujii, Masaaki

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Evaluation of sputtering rate change in the silicon transient region under medium energy O 2 + sputtering von Takano, Akio, Takenaka, Hisataka

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Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling von Kim, Kyung Joong, Jang, Jong Shik, Bennett, Joe, Simons, David, Barozzi, Mario, Takano, Akio, Li, Zhanping, Magee, Charles

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