Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM von Wang, Wensheng, Nakamura, Ko, Eshita, Takashi, Nomura, Kenji, Takai, Kazuaki, Yamaguchi, Hideshi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu

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A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti... von Wang, Wensheng, Nakamura, Ko, Nakabayashi, Masaaki, Eshita, Takashi, Takai, Kazuaki, Suezawa, Kenkichi, Oikawa, Mitsuaki, Sato, Nozomi, Ozawa, Soichiro, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Nagai, Kouichi

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Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions von Nomura, Kenji, Wang, Wensheng, Nakamura, Ko, Eshita, Takashi, Takai, Kazuaki, Ozawa, Soichiro, Yamaguchi, Hideshi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

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An 8-Mbit 0.18-µm CMOS 1T1C FeRAM in Planar Technology von KAWASHIMA, Shoichiro, MORITA, Keizo, NAKAZAWA, Mitsuharu, YAMANE, Kazuaki, OGAI, Mitsuhiro, KAWABATA, Kuninori, TAKAI, Kazuaki, FUJII, Yasuhiro, YASUDA, Ryoji, WANG, Wensheng, HIKOSAKA, Yukinobu, INOUE, Ken'ichi

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High Speed Pulse Measurement of Micro Ferroelectric Capacitors Using a Multi-Probe Atomic Force Microscope von Kin, Nobuhiro, Takai, Kazuaki, Honda, Koichiro

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Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories von Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

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Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories von Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

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Development of a Pb(Zr,Ti)O 3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories von Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi

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An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O3 capacitor von Wang, Wensheng, Eshita, Takashi, Takai, Kazuaki, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Ozawa, Soichiro, Nagai, Kouichi, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu

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An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O 3 capacitor von Wang, Wensheng, Eshita, Takashi, Takai, Kazuaki, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Ozawa, Soichiro, Nagai, Kouichi, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO x underlying layer of Pt bottom electrode for a La-doped lea... von Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead... von Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

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Control of La-doped Pb(Zr,Ti)O3 crystalline orientation and its influence on the properties of ferroelectric random access memory von Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kataoka, Yuji

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Control of La-doped Pb(Zr,Ti)O 3 crystalline orientation and its influence on the properties of ferroelectric random access memory von Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kataoka, Yuji

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO^sub x^ underlying layer of Pt bottom electrode for a La-dope... von Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x bottom electrode for the La-doped Pb(Zr,Ti)O 3 ferroelectric capacitor von Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO ^sub x^ bottom electrode for the La-doped Pb(Zr,Ti)O^sub 3^ ferroelectric capacitor von Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOx bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor von Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji

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Control of La-doped Pb(Zr,Ti)O^sub 3^ crystalline orientation and its influence on the properties of ferroelectric random access memory von Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto

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Development of a ferroelectric capacitor with double-layered PbLa(Zr,Ti)O3 thin films aiming to lowering operation voltage and leakage current of FRAM von Wang, Wensheng, Nakamura, Ko, Takai, Kazuaki, Nomura, Kenji, Eshita, Takashi, Nakabayashi, Masaaki, Ozawa, Soichiro, Yamaguchi, Hideshi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu

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