Selective formation of an efficient Er-O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen von TAKAHEI, K, TAGUCHI, A

Volltext

Erbium in Si: Estimation of energy transfer rate and trap depth from temperature dependence of intra-4f-shell luminescence von Taguchi, Akihito, Takahei, Kenichiro

Volltext

Trap level characteristics of rare-earth luminescence centers in III–V semiconductors von Taguchi, Akihito, Takahei, Kenichiro

Volltext

Efficient Er luminescence centers formed in GaAs by metalorganic chemical vapor deposition with oxygen codoping von TAKAHEI, K, TAGUCHI, A

Volltext

Optical properties of the dominant Nd center in GaP von TANIGUCHI, M, TAKAHEI, K

Volltext

Direct verification of energy back transfer from Yb 4f-shell to InP host von TAGUCHI, A, TANIGUCHI, M, TAKAHEI, K

Volltext

Thermal quenching mechanism of Yb intra-4f-shell luminescence in InP von TAGUCHI, A, NAKAGOME, H, TAKAHEI, K

Volltext

Observation of luminescence from a highly concentrated Nd center in GaP direct optical excitation and comparison with Nd centers excited under host excitation von TANIGUCHI, M, NAKAGOME, H, TAKAHEI, K

Volltext

Extremely sharp erbium-related intra-4f-shell photoluminescence of erbium-doped GaAs grown by metalorganic chemical vapor deposition von NAKAGOME, H, UWAI, K, TAKAHEI, K

Volltext

Er-doped InP and GaAs grown by metalorganic chemical vapor deposition von Uwai, Kunihiko, Nakagome, Hiroshi, Takahei, Kenichiro

Volltext

Yb-doped InP grown by metalorganic chemical vapor deposition von UWAI, K, NAKAGOME, H, TAKAHEI, K

Volltext

Er luminescence centers in GaAs grown by migration-enhanced epitaxy von TAGUCHI, A, KAWASHIMA, M, TAKAHEI, K, HORIKOSHI, Y

Volltext

Luminescence intensity and lifetime dependences on temperature for Nd-doped GaP and GaAs von Taniguchi, Moriyuki, Nakagome, Hiroshi, Takahei, Kenichiro

Volltext

Optical and electrical properties of ytterbium-doped GaAs grown by metalorganic chemical vapor deposition von TAGUCHI, A, NAKAGOME, H, TAKAHEI, K

Volltext

MOCVD growth and PL-characteristics of Nd doped GaAs von NAKAGOME, H, TAKAHEI, K

Volltext

Identification of acceptors and donors in high-purity InP grown by metalorganic chemical vapor deposition von UWAI, K, YAMADA, S, TAKAHEI, K

Volltext

Photoluminescence analysis of Er-doped GaAs under host photoexcitation and direct intra-4 f -shell photoexcitation von Takahei, Kenichiro, Taguchi, Akihito

Volltext

Band-edge-related luminescence due to the energy backtransfer in Yb-doped InP von Taguchi, Akihito, Takahei, Kenichiro

Volltext

InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region von Nagai, Haruo, Noguchi, Yoshio, Takahei, Kenichiro, Toyoshima, Yoshio, Iwane, Genzo

Volltext

Energy Transfer in Rare-Earth-Doped III-V Semiconductors von Taguchi, Akihito, Takahei, Kenichiro

Volltext