Spectroscopic ellipsometry study of ion-implanted Si(100) wafers von Tsunoda, Kazuaki, Adachi, Sadao, Takahashi, Mitsutoshi

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Four-wave mixing in silicon wire waveguides von Fukuda, Hiroshi, Yamada, Koji, Shoji, Tetsufumi, Takahashi, Mitsutoshi, Tsuchizawa, Tai, Watanabe, Toshifumi, Takahashi, Jun-Ichi, Itabashi, Sei-Ichi

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Microphotonics devices based on silicon microfabrication technology von Tsuchizawa, T., Yamada, K., Fukuda, H., Watanabe, T., Jun-ichi Takahashi, Takahashi, M., Shoji, T., Tamechika, E., Itabashi, S., Morita, H.

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Model-dielectric-function analysis of ion-implanted Si(100) wafers von Adachi, Sadao, Mori, Hirofumi, Takahashi, Mitsutoshi

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Optical properties of self-ion-implanted Si(100) studied by spectroscopic ellipsometry von Mori, Hirofumi, Adachi, Sadao, Takahashi, Mitsutoshi

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Silicon wire waveguiding system: Fundamental characteristics and applications von Yamada, Koji, Tsuchizawa, Tai, Watanabe, Toshifumi, Takahashi, Jun-Ichi, Fukuda, Hiroshi, Takahashi, Mitsutoshi, Shoji, Tetsufumi, Uchiyama, Shingo, Tamechika, Emi, Itabashi, Sei-Ichi, Morita, Hirofumi

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Characterization of the Interface between the Top Si and Buried Oxide in Separation by Implanted Oxygen Wafers von Takahashi, Mitsutoshi, Nakashima, Sadao, Kodate, Junichi, Ohno, Terukazu

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Optical properties of TiN films deposited by direct current reactive sputtering von Adachi, Sadao, Takahashi, Mitsutoshi

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Source/drain ion implantation into ultra-thin-single-crystalline-silicon-layer of Separation by IMplanted OXygen (SIMOX) wafers von TAKAHASHI, M, SAKAKIBARA, Y, NAKATA, J

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Visualization of sphingolipids and phospholipids in the fundic gland mucosa of human stomach using imaging mass spectrometry von Kurabe, Nobuya, Igarashi, Hisaki, Ohnishi, Ippei, Tajima, Shogo, Inoue, Yusuke, Takahashi, Yoshihiko, Setou, Mitsutoshi, Sugimura, Haruhiko

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Si Consumption in Selective Chemical Vapor Deposition of Tungsten Using SiH[sub 4] Reduction of WF[sub 6] von Takahashi, Mitsutoshi, Takayama, Kazuhiko

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Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization von Miyake, Masayasu, Kobayashi, Toshio, Sakakibara, Yutaka, Deguchi, Kimiyoshi, Takahashi, Mitsutoshi

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Charging damage in a hybrid parallel-scanning medium-eurrent ion implanter von Takahashi, Mitsutoshi

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Oxygen-doped Si epitaxial film (OXSEF) von TABE, M, TAKAHASHI, M, SAKAKIBARA, Y

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Si consumption in selective chemical vapor deposition of tungsten using SiH4 reduction of WF6 von TAKAHASHI, Mitsutoshi, TAKAYAMA, Kazuhiko

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Barrier effect of electron cyclotron resonance sputtered films against water and hydrogen molecules permeation von TAKAHASHI, Mitsutoshi, YAMADA, Hiroshi, AMAZAWA, Takao

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Determination of hydrogen concentration in PCVD silicon nitride films by elastic recoil detection analysis von TAKAHASHI, M, MAEDA, M, SAKAKIBARA, Y

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In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As + Ion Implantation von Nakata, Jyoji, Takahashi, Mitsutoshi, Kajiyama, Kenji

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Fully depleted 20-nm SOI CMOSFETs with W-clad gate/source/drain layers von Takahashi, M., Ohno, T., Sakakibara, Y., Takayama, K.

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Suppression of parasitic bipolar action in ultra-thin-film fully-depleted CMOS/SIMOX devices by Ar-ion implantation into source/drain regions von Ohno, T., Takahashi, M., Kado, Y., Tsuchiya, T.

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