High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells von Dharmarasu, Nethaji, Yamaguchi, Masafumi, Khan, Aurangzeb, Yamada, Takashi, Tanabe, Tatsuya, Takagishi, Shigenori, Takamoto, Tatsuya, Ohshima, Takeshi, Itoh, Hisayoshi, Imaizumi, Mitsuru, Matsuda, Sumio

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GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors von Moto, Akihiro, Tanaka, So, Tanabe, Tatsuya, Takagishi, Shigenori

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Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy von Takahashi, Mitsuo, Moto, Akihiro, Tanaka, So, Tanabe, Tatsuya, Takagishi, Shigenori, Karatani, Kouichi, Nakayama, Masaaki, Matsuda, Kazunari, Saiki, Toshiharu

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Effect of Substrate Orientation on Photoluminescence of GaNAs von Moto, Akihiro, Takahashi, Mitsuo, Takagishi, Shigenori

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Mechanically Stacked GaAs/GaInAsP Dual-Junction Solar Cell with High Conversion Efficiency of More than 31 von Yamada, Takashi, Moto, Akihiro, Iguchi, Yasuhiro, Takahashi, Mitsuo, Tanaka, So, Tanabe, Tatsuya, Takagishi, Shigenori

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Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy) von Moto, Akihiro, Tanaka, So, Ikoma, Nobuyuki, Tanabe, Tatsuya, Takagishi, Shigenori, Takahashi, Mitsuo, Katsuyama, Tsukuru

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1.3 µm Traveling-Wave GaInNAs Semiconductor Optical Amplifier von Hashimoto, Jun-ichi, Koyama, Kenji, Katsuyama, Tsukuru, Iguchi, Yasuhiro, Yamada, Takashi, Takagishi, Shigenori, Ito, Masashi, Ishida, Akira

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Over 27% efficiency GaAs/InGaAs mechanically stacked solar cell von Matsubara, Hideki, Tanabe, Tatsuya, Moto, Akihiro, Mine, Yasuo, Takagishi, Shigenori

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Ambience effects in annealing on improvements of optical properties of GaInNAs/GaAs single quantum wells von Ishizuka, Takashi, Doi, Hideyuki, Shimazu, Mitsuru, Takagishi, Shigenori, Yaginuma, Ryuta, Nakayama, Masaaki

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Radiation Resistant Low Bandgap InGaAsP Solar Cell for Multi-Junction Solar Cells von Khan, Aurangzeb, Yamaguchi, Masafumi, Dharmaras, Nathaji, Yamada, Takashi, Tanabe, Tatsuya, Takagishi, Shigenori, Itoh, Hisayoshi, Ohshima, Takeshi, Imaizumi, Mitsuru, Matsuda, Sumio

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2MeV-He ion channeling studies of MOVPE-grown GaInNAs single quantum wells von Nebiki, Takuya, Narusawa, Tadashi, Kumagai, Akiko, Saito, Tadashi, Takagishi, Shigenori

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Effect of operating pressure on the properties on GaAs grown by low-pressure MOCVD von TAKAGISHI, S, MORI, H

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Epitaxial growth of high-purity GaAs by low-pressure MOCVD von TAKAGISHI, S, MORI, H

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Influence of H2 overpressure on the properties of GaAs grown by low-pressure MOCVD von MORI, H, TAKAGISHI, S

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Considerable improvement of optical property of GaInNAs/GaAs quantum well von Ishizuka, Takashi, Yamada, Takashi, Iguchi, Yasuhiro, Saito, Tadashi, Katsuyama, Tsukuru, Takagishi, Shigenori

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5×5 cm 2 GaAs and GaInAs Solar Cells with High Conversion Efficiency von Yamada, Takashi, Moto, Akihiro, Iguchi, Yasuhiro, Takahashi, Mitsuo, Tanaka, So, Tanabe, Tatsuya, Takagishi, Shigenori

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1.3 mu m TRAVELING-WAVE GaInNAs SEMICONDUCTOR OPTICAL AMPLIFIER von Hashimoto, J, Koyama, K, Katsuyama, T, Iguchi, Y, Yamada, T, Takagishi, S

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Low-pressure OMVPE of GaAs using triethylgallium von KIMURA, K, TAKAGISHI, S, HORIGUCHI, S, KAMON, K, MIHARA, M, ISHII, M

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Diagnostics of gas reaction using trimethylgallium-AsH3 and triethylgallium-AsH3 in low-pressure organometallic vapor phase epitaxy von HORIGUCHI, S, KIMURA, K, TAKAGISHI, S, KAMON, K, MASHITA, M, MIHARA, M, ISHII, M

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OBJECT DETECTION DEVICE AND OBJECT DETECTION METHOD von TAKAGISHI SHIGENORI, MURASE TORU

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