Comparative study of cattle, sheep and goats on biochemical profiles of hydatid cyst fluid from the lungs and liver von Radfar, Mohammad Hossein, Tajalli, Simin, Alipour, Tahereh

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Proširenost i morfološke značajke cisti Cysticercus tenuicollis (cisticerci Taenia hydatigena) ovaca i koza u Iranu von Radfar, Mohammad Hossein, Tajalli, Simin, Jalalzadeh, Mansooreh

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Metadiscoursal Markers in Medical and Literary Texts von Mostafavi, Marzieh, Tajalli, Ghaffar

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A label-free electrochemical immunosensor for CA125 detection based on CMK-3(Au/Fc@MgAl-LDH)n multilayer nanocomposites modification von Wu, Mengdie, Liu, Simin, Qi, Feifan, Qiu, Ren, Feng, Jing, Ren, Xinshui, Rong, Shengzhong, Ma, Hongkun, Chang, Dong, Pan, Hongzhi

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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability von Zeng, Fanming, An, Judy Xilin, Zhou, Guangnan, Li, Wenmao, Wang, Hui, Duan, Tianli, Jiang, Lingli, Yu, Hongyu

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Plasma etching of wide bandgap and ultrawide bandgap semiconductors von Pearton, Stephen J., Douglas, Erica A., Shul, Randy J., Ren, Fan

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Surface states in AlGaN/GaN high electron mobility transistors: Quantitative energetic profiles and dynamics of the surface Fermi level von Turkulets, Yury, Shalish, Ilan

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Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate von Ma, Qiang, Ando, Yuji, Tanaka, Atsushi, Wakejima, Akio

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Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics von Mehta, J., Abid, I., Elwaradi, R., Cordier, Y., Medjdoub, F.

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Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer von Moench, Stefan, Müller, Stefan, Reiner, Richard, Waltereit, Patrick, Czap, Heiko, Basler, Michael, Hückelheim, Jan, Kirste, Lutz, Kallfass, Ingmar, Quay, Rüdiger, Ambacher, Oliver

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Analysis of trapping effects on DC and RF performance in double Π-gate Al0.3Ga0.7N/GaN MOSHEMTs von Venkateswarlu, Rayabarapu, Acharya, Bibhudendra, Mishra, Guru Prasad

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AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts von Abid, Idriss, Mehta, Jash, Cordier, Yvon, Derluyn, Joff, Degroote, Stefan, Miyake, Hideto, Medjdoub, Farid

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Hot electron effects in AlGaN/GaN HEMTs during hard-switching events von Minetto, Andrea, Modolo, Nicola, Meneghini, Matteo, Zanoni, Enrico, Sayadi, Luca, Sicre, Sébastien, Deutschmann, Bernd, Häberlen, Oliver

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Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study von Haziq, Muhaimin, Kawarada, Hiroshi, Falina, Shaili, Syamsul, Mohd

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Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors von Ma, Qiang, Urano, Shiyo, Ando, Yuji, Tanaka, Atsushi, Wakejima, Akio

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Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer von Mikulics, M, Kordoš, P, Gregušová, D, Gaži, Š, Novák, J, Sofer, Z, Mayer, J, Hardtdegen, H

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A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices von Hite, Jennifer K.

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Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter von Ahmed, Osama, Khan, Yousuf, Butt, Muhammad A., Kazanskiy, Nikolay L., Khonina, Svetlana N.

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Persuasion in Journalism: A Study of Metadiscourse in Texts by Native Speakers of English and Iranian EFL Writers von Moghadam, Farzane Deliery

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Acknowledgement to Reviewers of IJGI in 2019 von IJGI Editorial Office

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