Epitaxial growth of ErAs on (100)GaAs von PALMSTRØM, C. J, TABATABAIE, N, ALLEN, S. J. JR

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Fast, low insertion-loss optical switch using lithographically defined electromagnetic microactuators and polymeric passive alignment structures von Norwood, R. A., Holman, J., Shacklette, L. W., Emo, S., Tabatabaie, N., Guckel, H.

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Microcavity vacuum-field configuration and the spontaneous emission power von Zhang, T., Wohlbier, J.G., Choquette, K.D., Tabatabaie, N.

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Chaotic dynamics of mode competition in a vertical-cavity surface emitting laser diode under DC excitation von Richie, D.A., Zhang, T., Choquette, K.D., Leibenguth, R.E., Zachman, J.C., Tabatabaie, N.

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Magneto-transport in ultrathin ErAs epitaxial layers buried in GaAs von Allen, S.J., Tabatabaie, N., Palmstrøm, C.J., Mounier, S., Hull, G.W., Sands, T., DeRosa, F., Gilchrist, H.L., Garrison, K.C.

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Chemical beam epitaxial growth of extremely high quality InGaAs on InP von TSANG, W. T, DAYEM, A. H, CHIU, T. H, CUNNINGHAM, J. E, SCHUBERT, E. F, DITZENBERGER, J. A, SHAH, J, ZYSKIND, J. L, TABATABAIE, N

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LPE diffusion-limited growth of InGaAs von Pan, N., Tabatabaie, N., Stillman, G.E.

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High purity InP and InGaAsP grown by liquid phase epitaxy von Cook, L.W., Tashima, M.M., Tabatabaie, N., Low, T.S., Stillman, G.E.

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Structure and magnetic properties of the dilute magnetic semiconductor Mn:CuInTe2 von LIN, L.-J, WERNICK, J. H, TABATABAIE, N, HULL, G. W, MEAGHER, B

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Electrical and optical characterization of back-to-back Schottky (Al,Ga)As/NiAl/(Al,Ga)As molecular beam epitaxially grown double-heterostructure diodes von CHEEKS, T. L, SANDS, T, ANHORY, R. E, HARBISON, J, TABATABAIE, N, GILCHRIST, H. L, WILKENS, B. J, KERAMIDAS, V. G

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Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor von Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Keramidas, V.G.

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Negative transconductance in monocrystalline (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor tunneling transistors von Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Cheeks, T.L., Florez, L.T., Keramidas, V.G.

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Impact ionization coefficients in (111) InP von TABATABAIE, N, ROBBINS, V. M, PAN, N, STILLMAN, G. E

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Stable and epitaxial metal/III-V semiconductor heterostructures von Sands, T., Palmstrøm, C.J., Harbison, J.P., Keramidas, V.G., Tabatabaie, N., Cheeks, T.L., Ramesh, R., Silberberg, Y.

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MBE growth of AlGaAs/NiAl/AlGaAs heterostructures: A novel epitaxial III–V semiconductor/metal system von Harbison, J.P., Sands, T., Tabatabaie, N., Chan, W.K., Florez, L.T., Keramidas, V.G.

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The effect of lattice mismatch on hole diffusion lengths in liquid phase epitaxial InGaAsP (λg = 1.15 μm)/InP von Tashima, M. M., Cook, L. W., Tabatabaie, N., Stillman, G. E.

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InGaAsP photodiodes von Stillman, G.E., Cook, L.W., Tabatabaie, N., Bulman, G.E., Robbins, V.M.

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"Investigation of Roughing Filter Efficiency on Turbidity and Parasite Egg Removal from Raw Water" von AH Mahvi, J Nouri, N Tabatabaie

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ErAs epitaxial layers buried in GaAs: magnetotransport and spin-disordered scattering von Allen, S J, Tabatabaie, N, Palmstrom, C J

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VIA-2 electron velocity-field characteristics of GaAs and In 0.53 Ga 0.47 As below the Gunn effect threshold von Haase, M.A., Tabatabaie, N., Robbins, V.M., Stillman, G.E.

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