Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC von Rudenko, T.E., Osiyuk, I.N., Tyagulski, I.P., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö.

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Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements von RUDENKO, T. E, OLAFSSON, H. O, SVEINBJÖRNSSON, E. O, OSIYUK, I. P, TYAGULSKI, I. P

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Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique von Ólafsson, H. Ö., Sveinbjörnsson, E. Ö., Rudenko, T. E., Tyagulski, I. P., Osiyuk, I. N., Lysenko, V. S.

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Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs von Lysenko, V.S, Tyagulski, I.P, Gomeniuk, Y.V, Osiyuk, I.N

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Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction von Lysenko, V S, Tyagulski, I P, Gomeniuk, Y V, Osiyuk, I N, Tkach, I I

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Electrical characterization of the amorphous SiC-pSi structure von Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N., Mikhnov, A.K.

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Thermally activated processes in the buried oxide of SIMOX SOI structures and devices von Lysenko, V.S, Nazarov, A.N, Kilchytska, V.I, Osiyuk, I.N, Tyagulski, I.P, Gomeniuk, Yu.V, Barchuk, I.P

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A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface von Rudenko, T.E., Tyagulski, I.P., Sveinbjörnsson, E.Ö., Kilchytska, V.I., Osiyuk, I.N., Ólafsson, H.Ö.

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Excess conductivity and thermally activated dissipation studies under strong electrostatic field in YBa2Cu3O7-δ thin films von GOMENIUK, Y. V, LOZOVSKI, V. Z, LYSENKO, V. S, TYAGULSKI, I. P

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Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structures von Gomeniuk, Yu.V., Litovski, R.N., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P.

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New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures von Rudenko, T.E., Tyagulski, I.P., Sveinbjörnsson, E.Ö., Kilchytska, V.I., Osiyuk, I.N., Ólafsson, H.Ö.

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Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors von Lysenko, V.S, Tyagulski, I.P, Gomeniuk, Y.V, Osiyuk, I.N

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Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique von Rudenko, T.E., Lysenko, V.S., Tyagulski, I.P., Osiyuk, I.P., Sveinbjörnsson, E.Ö., Ólafsson, H.Ö.

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Effect of Strong Electrostatic Fields on the Properties of Y1−xPrxBa2Cu3O7-Δ Ceramics von Gomeniuk, Yu. V., Lozovski, V. Z., Lysenko, V. S., Tyagulski, I. P., Variukhin, V. N.

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Flux pinning under the strong electrostatic field in the BiPbSrCaCuO film von Lysenko, V.S., Gomeniuk, Y.V., Tyagulski, I.P., Osiyuk, I.N., Lozovski, V.Z., Varyukhin, V.N.

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Thermally stimulated field emission of charge from traps in the transition layer of SiSiO2 structures von Gomeniuk, Yu.V., Litovski, R.N., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P.

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Critical currents in oxygen-implanted YBa2Cu3O7-δ thin films under magnetic and electrostatic fields von GOMENIUK, YU. V, LOZOVSKI, V. Z, LYSENKO, V. S, TYAGULSKI, I. P

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Effect of traps in the transition Si/SiO sub(2) layer on input characteristics of SOI transistors von Lysenko, V S, Tyagulski, I P, Gomeniuk, Y V, Osiyuk, I N

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Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs von Lysenko, V.S.

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Critical currents in oxygen-implanted YBa2Cu3O7−σ thin films under magnetic and electrostatic fields von Gomeniuk, Yu.V., Lozovski, V.Z., Lysenko, V.S., Tyagulski, I.P.

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