A Fluorescence Resonance Energy Transfer-Derived Structure of a Quantum Dot-Protein Bioconjugate Nanoassembly von Medintz, I. L., Konnert, J. H., Clapp, A. R., Stanish, I., Twigg, M. E., Mattoussi, H., Mauro, J. M., Deschamps, J. R., Karle, Jerome

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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN von Koleske, D.D, Wickenden, A.E, Henry, R.L, Twigg, M.E

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GaN vertical and lateral polarity heterostructures on GaN substrates von Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.

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Resistivity control in unintentionally doped GaN films grown by MOCVD von Wickenden, A.E., Koleske, D.D., Henry, R.L., Twigg, M.E., Fatemi, M.

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Thiol-Terminated Di-, Tri-, and Tetraethylene Oxide Functionalized Gold Nanoparticles:  A Water-Soluble, Charge-Neutral Cluster von Foos, Edward E, Snow, Arthur W, Twigg, Mark E, Ancona, Mario G

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GaN decomposition in H 2 and N 2 at MOVPE temperatures and pressures von Koleske, D.D., Wickenden, A.E., Henry, R.L., Culbertson, J.C., Twigg, M.E.

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates von Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates von Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy, C. R., Gaskill, D. K., Henry, R. L., Twigg, M. E.

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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes von Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. B., Wang, S.

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Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs von Warner, Jeffrey H., Inguimbert, Christophe, Twigg, Mark E., Messenger, Scott R., Walters, Robert J., Romero, Manuel J., Summers, Geoffrey P.

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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces von Bassim, N. D., Twigg, M. E., Eddy, C. R., Culbertson, J. C., Mastro, M. A., Henry, R. L., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.

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Investigation of three-step epilayer growth approach of GaN films to minimize compensation von EDDY, C. R, HOLM, R. T, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E

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Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC von Koleske, D. D., Henry, R. L., Twigg, M. E., Culbertson, J. C., Binari, S. C., Wickenden, A. E., Fatemi, M.

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Growth and characterization of III-N bulk crystals von Frazier, R. M., Feigelson, B. N., Twigg, M. E., Murthy, M., Freitas, J. A.

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Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides von Hobart, K. D., Kub, F. J., Fatemi, M., Twigg, M. E., Thompson, P. E., Kuan, T. S., Inoki, C. K.

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Ga vacancies and grain boundaries in GaN von Oila, J., Saarinen, K., Wickenden, A. E., Koleske, D. D., Henry, R. L., Twigg, M. E.

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Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT von Mastro, M.A., Eddy, C.R., Bassim, N.D., Twigg, M.E., Edwards, A., Henry, R.L., Holm, R.H.

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The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys von Wickenden, A. E., Koleske, D. D., Henry, R. L., Gorman, R. J., Twigg, M. E., Fatemi, M., Freitas, J. A., Moore, W. J.

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Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures von Bennett, Brian R., Shanabrook, B. V., Twigg, M. E.

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Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes von Chow, T. Paul, Sumakeris, Joseph J., Zhu, Lin, Twigg, Mark E., Stahlbush, Robert E., Tang, Yi, Losee, Peter A., Irvine, Kenneth G., Wang, W.

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