A Fluorescence Resonance Energy Transfer-Derived Structure of a Quantum Dot-Protein Bioconjugate Nanoassembly von Medintz, I. L., Konnert, J. H., Clapp, A. R., Stanish, I., Twigg, M. E., Mattoussi, H., Mauro, J. M., Deschamps, J. R., Karle, Jerome

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Dislocation blocking in elastically anisotropic semiconductor thin films von Twigg, M. E., Jernigan, G. G.

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Resistivity control in unintentionally doped GaN films grown by MOCVD von Wickenden, A.E., Koleske, D.D., Henry, R.L., Twigg, M.E., Fatemi, M.

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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN von Koleske, D.D, Wickenden, A.E, Henry, R.L, Twigg, M.E

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Growth of high quality, epitaxial InSb nanowires von Park, Hyun D., Prokes, S.M., Twigg, M.E., Ding, Yong, Wang, Zhong Lin

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GaN vertical and lateral polarity heterostructures on GaN substrates von Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.

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Transmission electron microscopy analysis of reduction reactions and phase transformations in Nb2O5 films deposited by atomic layer deposition von Twigg, M. E., Kozen, A. C., Ruppalt, L. B., Prokes, S. M., Cho, H. S.

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Formation and stability of crystalline and amorphous Al2O3 layers deposited on Ga2O3 nanowires by atomic layer epitaxy von Katz, M. B., Twigg, M. E., Prokes, S. M.

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Si-assisted growth of InAs nanowires von Park, Hyun D., Prokes, S. M., Twigg, M. E., Cammarata, Robert C., Gaillot, Anne-Claire

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates von Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes von Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. B., Wang, S.

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Investigation of three-step epilayer growth approach of GaN films to minimize compensation von EDDY, C. R, HOLM, R. T, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E

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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates von Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy, C. R., Gaskill, D. K., Henry, R. L., Twigg, M. E.

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging von Twigg, M. E., Picard, Y. N., Caldwell, J. D., Eddy, C. R., Mastro, M. A., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.

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Growth of crystalline Al2O3 via thermal atomic layer deposition: Nanomaterial phase stabilization von Prokes, S. M., Katz, M. B., Twigg, M. E.

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Simulation and analysis of electron channeling contrast images of threading screw dislocations in 4H-SiC von Twigg, M. E., Picard, Y. N.

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Growth and characterization of III-N bulk crystals von Frazier, R. M., Feigelson, B. N., Twigg, M. E., Murthy, M., Freitas, J. A.

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Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs von Warner, Jeffrey H., Inguimbert, Christophe, Twigg, Mark E., Messenger, Scott R., Walters, Robert J., Romero, Manuel J., Summers, Geoffrey P.

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Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers von Katz, M. B., Twigg, M. E., Mahadik, N. A., Canedy, C. L., Affouda, C. A.

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps von Bassim, N.D., Twigg, M.E., Mastro, M.A., Eddy, C.R., Zega, T.J., Henry, R.L., Culbertson, J.C., Holm, R.T., Neudeck, P., Powell, J.A., Trunek, A.J.

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