Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device von Banerjee, S.K., Register, L.F., Tutuc, E., Reddy, D., MacDonald, A.H.

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Direct measurement of the Fermi energy in graphene using a double-layer heterostructure von Kim, Seyoung, Jo, Insun, Dillen, D C, Ferrer, D A, Fallahazad, B, Yao, Z, Banerjee, S K, Tutuc, E

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Spin-polarized to valley-polarized transition in graphene bilayers at ν=0 in high magnetic fields von Kim, Seyoung, Lee, Kayoung, Tutuc, E

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Counterflow measurements in strongly correlated GaAs hole bilayers: Evidence for electron-hole pairing von SHAYEGAN, M, TUTUC, E, HUSE, D. A

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Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride von Wang, Y., Sohier, T., Watanabe, K., Taniguchi, T., Verstraete, M. J., Tutuc, E.

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High performance wire-array silicon solar cells von Gunawan, O., Wang, K., Fallahazad, B., Zhang, Y., Tutuc, E., Guha, S.

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Scaling of Al2O3 dielectric for graphene field-effect transistors von Fallahazad, B., Lee, K., Lian, G., Kim, S., Corbet, C. M., Ferrer, D. A., Colombo, L., Tutuc, E.

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Pinning modes and interlayer correlation in high-magnetic-field bilayer Wigner solids von Wang, Zhihai, Chen, Yong P, Engel, L W, Tsui, D C, Tutuc, E, Shayegan, M

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Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking von Lee, Kayoung, Kim, Seyoung, Points, M. S, Beechem, T. E, Ohta, Taisuke, Tutuc, E

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Two-dimensional electrons occupying multiple valleys in AlAs von Shayegan, M., De Poortere, E. P., Gunawan, O., Shkolnikov, Y. P., Tutuc, E., Vakili, K.

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Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics von Kayoung Lee, Fallahazad, B., Hongki Min, Tutuc, E.

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Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field von Shkolnikov, Y P, De Poortere, E P, Tutuc, E, Shayegan, M

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Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells von VAKILI, K, SHKOLNIKOV, Y. P, TUTUC, E, DE POORTERE, E. P, SHAYEGAN, M

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High-Performance Ge nMOSFETs With n+-p Junctions Formed by Spin-On Dopant von JAMIL, M, MANTEY, J, ONYEGAM, E. U, CARPENTER, G. D, TUTUC, E, BANERJEE, S. K

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Band engineered epitaxial Ge–SixGe1−x core-shell nanowire heterostructures von Varahramyan, K. M., Ferrer, D., Tutuc, E., Banerjee, S. K.

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Doping of germanium nanowires grown in presence of PH3 von Tutuc, E., Chu, J. O., Ott, J. A., Guha, S.

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Resistance Spikes at Transitions between Quantum Hall Ferromagnets von de Poortere, E. P., Tutuc, E., Papadakis, S. J., Shayegan, M.

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Spin polarization and g factor of a dilute GaAs two-dimensional electron system von Tutuc, E, Melinte, S, Shayegan, M

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GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization von Shahrjerdi, D., Garcia-Gutierrez, D. I., Akyol, T., Bank, S. R., Tutuc, E., Lee, J. C., Banerjee, S. K.

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Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells von De Poortere, E. P., Shkolnikov, Y. P., Tutuc, E., Papadakis, S. J., Shayegan, M., Palm, E., Murphy, T.

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