Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers von Zhang, Q. Jon, Rivera, Angel, Sumakeris, Joseph J., Hefner, A., Paisley, Michael J., Tsvetkov, Valeri F., O'Loughlin, Michael J., Richmond, Jim, Powell, Adrian R., Hull, Brett A.

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Defect Status in SiC Manufacturing von Leonard, R.T., Paisley, Michael J., Hobgood, H.McD, Carter Jr, Calvin H., Powell, Adrian R., Basceri, C., Brady, M.F., Burk, Albert A., Balkas, C., Khlebnikov, I., Sumakeris, Joseph J., Balakrishna, Vijay, Khlebnikov, Y., Malta, D.P., Tsvetkov, Valeri F., Berkman, Elif, O'Loughlin, Michael J., Deyneka, E.

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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices von Calus, M.R., Glass, R.C., McD. Hobgood, H., Malta, D.P., Tsvetkov, Valeri F., Carter Jr, Calvin H., Powell, Adrian R., Jenny, Jason R., Müller, Stephan G.

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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances von Calus, M.R., Glass, R.C., McD. Hobgood, H., Malta, D.P., Leonard, R.T., Tsvetkov, Valeri F., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Jenny, Jason R., Müller, Stephan G.

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Sublimation-Grown Semi-Insulating SiC for High Frequency Devices von Allen, S.T., Glass, R.C., Brixius, W.H., Leonard, R.T., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Jenny, Jason R., Müller, Stephan G., McD. Hobgood, H., Malta, D.P., Tsvetkov, Valeri F., Palmour, John W.

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Large Diameter 4H-SiC Substrates for Commercial Power Applications von Burk, Albert A., Glass, R.C., Sumakeris, Joseph J., McD. Hobgood, H., Leonard, R.T., Tsvetkov, Valeri F., Trussell, R., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Müller, Stephan G.

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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production von Allen, S.T., Glass, R.C., Fechko, G., Brixius, W.H., Leonard, R.T., Henshall, D., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Jenny, Jason R., Müller, Stephan G., McD. Hobgood, H., Malta, D.P., Tsvetkov, Valeri F., Palmour, John W.

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Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals von Dudley, Michael, Glass, R.C., Si, W., Tsvetkov, Valeri F., Carter Jr, Calvin H.

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100 mm 4HN-SiC Wafers with Zero Micropipe Density von Leonard, R.T., Paisley, Michael J., Khlebnikov, I., Hobgood, H.McD, Carter Jr, Calvin H., Powell, Adrian R., Basceri, C., Brady, M.F., Zilli, R., Jenny, Jason R., Balakrishna, Vijay, Khlebnikov, Y., Malta, D.P., Tsvetkov, Valeri F., Deyneka, E.

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Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications von Glass, R.C., McD. Hobgood, H., Fechko, G., Malta, D.P., Brixius, W.H., Leonard, R.T., Henshall, D., Tsvetkov, Valeri F., Carter Jr, Calvin H., Brady, M.F., Jenny, Jason R., Müller, Stephan G.

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METHOD AND SYSTEM WITH SEED HOLDER FOR GROWING SILICON CARBIDE SINGLE CRYSTALS von Powell, Adrian, Mueller, Stephan, Tsvetkov, Valeri F

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White-beam synchrotron topographic studies of defects in 6H-SiC single crystals von Dudley, M, Wang, Shaoping, Huang, Wei, Jr, C H Carter, Tsvetkov, V F, Fazi, C

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REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS von Balkas, Elif, Khlebnikov, Yuri, Malta, David P, Bubel, Simon, Leonard, Robert Tyler, O'Hara, Kathryn A, Tsvetkov, Valeri F

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Reduced optical absorption for silicon carbide crystalline materials von Balkas, Elif, Khlebnikov, Yuri, Malta, David P, Bubel, Simon, Leonard, Robert Tyler, O'Hara, Kathryn A, Tsvetkov, Valeri F

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REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS von BALKAS, Elif, LEONARD, Robert Tyler, O'HARA, Kathryn A, KHLEBNIKOV, Yuri, MALTA, David P, TSVETKOV, Valeri F, BUBEL, Simon

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SiC Seeded Boule Growth von Glass, R.C., Tsvetkov, Valeri F., Henshall, D., Asbury, D., Carter Jr, Calvin H.

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LARGE DIAMETER SILICON CARBIDE WAFERS von Khlebnikov, Yuri, Tsvetkov, Valeri F, Kent, Caleb A, Griffiths, Steven, Balkas, Elif, Kramarenko, Oleksandr, Seaman, Jeffrey C, Bubel, Simon, Leonard, Robert Tyler, Paisley, Michael J, Deyneka, Eugene, Conrad, Matthew David, Powell, Adrian R, Sakhalkar, Varad R

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REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS von BALKAS, Elif, LEONARD, Robert Tyler, O'HARA, Kathryn A, KHLEBNIKOV, Yuri, MALTA, David P, TSVETKOV, Valeri F, BUBEL, Simon

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REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS von Balkas, Elif, Khlebnikov, Yuri, Malta, David P, Bubel, Simon, Leonard, Robert Tyler, O'Hara, Kathryn A, Tsvetkov, Valeri F

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Large diameter silicon carbide wafers von Khlebnikov, Yuri, Tsvetkov, Valeri F, Kent, Caleb A, Griffiths, Steven, Balkas, Elif, Kramarenko, Oleksandr, Seaman, Jeffrey C, Bubel, Simon, Leonard, Robert Tyler, Paisley, Michael J, Deyneka, Eugene, Conrad, Matthew David, Powell, Adrian R, Sakhalkar, Varad R

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