A spatial autoregressive stochastic frontier model for panel data incorporating a model of technical inefficiency von Tsukamoto, Takahiro

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Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

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Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method von Tsukamoto, Takahiro, Ikeno, Kento, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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Direct Growth of Patterned Ge on Insulators Using Graphene von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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Simple annealing process for producing unique one-dimensional fullerene crystal named fullerene finned-micropillar von Onishi, Taku, Tsukamoto, Takahiro, Oya, Takahide

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Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

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Effects of Surface Chemistry of Substrates on Raman Spectra in Graphene von Tsukamoto, Takahiro, Yamazaki, Kenji, Komurasaki, Hiroki, Ogino, Toshio

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Graphene etching controlled by atomic structures on the substrate surface von Tsukamoto, Takahiro, Ogino, Toshio

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Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth von Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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Plasma Interleukin-6 and Tumor Necrosis Factor-α Can Predict Coronary Endothelial Dysfunction in Hypertensive Patients von Naya, Masanao, Tsukamoto, Takahiro, Morita, Koichi, Katoh, Chietsugu, Furumoto, Tomoo, Fujii, Satoshi, Tamaki, Nagara, Tsutsui, Hiroyuki

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Morphology of Graphene on Step-Controlled Sapphire Surfaces von Tsukamoto, Takahiro, Ogino, Toshio

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Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode von Tsukamoto, Takahiro, Kurihara, Shota, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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p-Cu2O/SiCxOy/n-SiC/n-Si memory diode having resistive nonvolatile memory and rectifying behaviors von Yamashita, Atsushi, Sato, Yoshihiko, Tsukamoto, Takahiro, Suda, Yoshiyuki

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Control of the spatial distribution of porous alumina micro-domes formed during anodic oxidation von Tsukamoto, Takahiro, Ogino, Toshio

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Increasing the critical thickness of SiGe layers on Si substrates using sputter epitaxy method von Tsukamoto, Takahiro, Aoyagi, Yosuke, Nozaki, Shouta, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

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p-Cu2O/SiOx/n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiOx von Yamashita, Atsushi, Tsukamoto, Takahiro, Suda, Yoshiyuki

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p-Cu 2 O/SiO x /n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiO x von Yamashita, Atsushi, Tsukamoto, Takahiro, Suda, Yoshiyuki

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Efects of Low‑Temperature GeSn Bufer Layers on Sn Surface Segregation During GeSn Epitaxial Growth von Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda

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Observation of Three Dimensional Micro-Scaled Structures Buried in Porous Alumina Layers Fabricated by Anodic Oxidation von Tsukamoto, Takahiro, Oya, Takahide, Ogino, Toshio

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