Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry von Tsukamoto, Katsuhiro, Kuroi, Takashi, Kawasaki, Yoji

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Proximity gettering of heavy metals by high-energy ion implantation von KUROI, T, KAWASAKI, Y, KOMORI, S, FUKUMOTO, K, INUISHI, M, TSUKAMOTO, K, SHINYASHIKI, H, SHINGYOJI, T

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Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma von Fujiwara, Nobuo, Maruyama, Takahiro, Yoneda, Masahiro, Tsukamoto, Katsuhiro, Banjo, Toshinobu

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Bipolar transistor with a buried layer formed by high-energy ion implantation for subhalf-micron bipolar-complementary metal oxide semiconductor LSIs von KUROI, T, KAWASAKI, Y, ISHIGAKI, Y, KINOSHITA, Y, INUISHI, M, TSUKAMOTO, K, TSUBOUCHI, N

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Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation von Sayama, Hirokazu, Takai, Mikio, Akasaka, Youichi, Tsukamoto, Katsuhiro, Namba, Susumu

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Titanium silicidation by halogen lamp annealing von OKAMOTO, T, TSUKAMOTO, K, SHIMIZU, M, MATSUKAWA, T

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Simultaneous formation of TiN and TiSi2 by lamp annealing in NH3 ambient and its application to diffusion barriers von OKAMOTO, T, SHIMIZU, M, OHSAKI, A, MASHIKO, Y, TSUKAMOTO, K, MATSUKAWA, T, NAGAO, S

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Thermal Diffusion of Ion-Implanted Arsenic in Silicon von Tsukamoto, Katsuhiro, Akasaka, Yoichi, Kijima, Koichi

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Range Distribution of Implanted Arsenic in Silicon Dioxide von Tsukamoto, Katsuhiro, Akasaka, Youichi, Horie, Kazuo

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A high-speed 0.6-μm 16K CMOS gate array on a thin SIMOX film von YAMAGUCHI, Y, ISHIBASHI, A, NISHIMURA, T, TSUKAMOTO, K, HORIE, K, AKASAKA, Y

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Arsenic-Implanted Emitter and Its Application to UHF Power Transistors von Tsukamoto, Katsuhiro, Akasaka, Yoichi, Watari, Yoshihiko, Kusano, Yuji, Hirose, Yoshihiko, Nakamura, Genshiro

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Study of Tin Diffusion into Silicon by Backscattering Analysis von Akasaka, Youichi, Horie, Kazuo, Nakamura, Genshiro, Tsukamoto, Katsuhiro, Yukimoto, Yoshinori

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Semiconductor memory device and method for making the same von TSUKAMOTO, KATSUHIRO

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JP2634163B von TSUKAMOTO KATSUHIRO

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Application of Diffusion from Implanted Polycrystalline Silicon to Bipolar Transistors von Akasaka, Youichi, Tsukamoto, Katsuhiro, Kawaguchi, Mikio, Sato, Hirokazu, Horie, Kazuo, Komiya, Hiroyoshi

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Source-to-drain breakdown voltage improvement in ultrathin-film SOI MOSFET's using a gate-overlapped LDD structure von Yamaguchi, Y., Iwamatsu, T., Joachim, H.-O., Oda, H., Inoue, Y., Nishimura, T., Tsukamoto, K.

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A complete substrate current model including band-to-band tunneling current for circuit simulation von Tanizawa, M., Ikeda, M., Kotani, N., Tsukamoto, K., Horie, K.

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Mechanism of Reactive Ion Etching Lag in WSi 2 Etching Using Electron Cyclotron Resonance Plasma von Maruyama, Takahiro, Fujiwara, Nobuo, Yoneda, Masahiro, Tsukamoto, Katsuhiro, Banjo, Toshinobu

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Semiconductor memory device having buried structure to suppress soft errors von TSUKAMOTO, KATSUHIRO

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Verbindungsstruktur für leitende Schichten einer Halbleitervorrichtung und ein Verfahren zu deren Herstellung von TSUKAMOTO, KATSUHIRO, MORI, KENICHI

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