The contrast mechanism in low voltage scanning electron microscopy of single-walled carbon nanotubes von Zhang, R Y, Wei, Y, Nagahara, L A, Amlani, I, Tsui, R K

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Field-effect and single-electron transistors based on single-walled carbon nanotubes catalyzed by Al/Ni thin films von Amlani, I., Zhang, R., Tresek, J., Tsui, R.K.

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Properties of AlxGa1-xAs (xAl~0.3) grown by molecular-beam epitaxy on misoriented substrates von TSUI, R. K, CURLESS, J. A, KRAMER, G. D, PEFFLEY, M. S

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Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy von TSUI, R. K, CURLESS, J. A, KRAMER, G. D, PEFFLEY, M. S, RODE, D. L

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Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates von TSUI, R. K, KRAMER, G. D, CURLESS, J. A, PEFFLEY, M. S

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Electrical measurements of a dithiolated electronic molecule via conducting atomic force microscopy von Rawlett, Adam M., Hopson, Theresa J., Nagahara, Larry A., Tsui, Raymond K., Ramachandran, Ganesh K., Lindsay, Stuart M.

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Directed placement of suspended carbon nanotubes for nanometer-scale assembly von Nagahara, Larry A., Amlani, Islamshah, Lewenstein, Justin, Tsui, Raymond K.

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An approach to transport measurements of electronic molecules von Amlani, Islamshah, Rawlett, Adam M., Nagahara, Larry A., Tsui, Raymond K.

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Chemical Vapor Deposition of Single-Walled Carbon Nanotubes Using Ultrathin Ni/Al Film as Catalyst von Zhang, Ruth Y, Amlani, Islamshah, Baker, Jeff, Tresek, John, Tsui, Raymond K, Fejes, Peter

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Excess drain current in heterojunction FETs due to substrate space-charge-limited current von Tehrani, S., Goronkin, H., Hoogstra, M.M., Maracas, G.N., Curless, J.A., Kramer, G.D., Peffley, M.S., Tsui, R.K.

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Superior low-noise GaAs MESFET's with graded channel grown by MBE von Nair, V.K., Tam, G., Curless, J.A., Kramer, G.D., Peffley, M.S., Tsui, R.K., Atkins, W.K.

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Plastic deformation and fracture resulting from stresses caused by differential thermal contraction in GaP/Si heterostructures von Tsui, R. K., Gershenzon, M.

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The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale von Mountjoy, G., Crozier, P. A., Fejes, P. L., Tsui, R. K., Kramer, G. D.

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High-Yield Selective Placement of Carbon Nanotubes on Pre-Patterned Electrodes von Lewenstein, Justin C, Burgin, Timothy P, Ribayrol, Aline, Nagahara, Larry A, Tsui, Raymond K

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The effects of substrate oxygen content and preannealing on the properties of silicon epitaxial layers von TSUI, R. K, CURLESS, J. A, SECCO DARAGONA, F, FEJES, P. L

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A molecular electronics toolbox von Rawlett, Adam M, Hopson, Theresa J, Amlani, Islamshah, Zhang, Ruth, Tresek, John, Nagahara, Larry A, Tsui, Raymond K, Goronkin, Herb

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Formation of Single-Walled Carbon Nanotubes via Reduced-Pressure Thermal Chemical Vapor Deposition von Zhang, Ruth, Tsui, Raymond K, Tresek, John, Rawlett, Adam M, Amlani, Islamshah, Hopson, Theresa, Fejes, Peter

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The dependence of room-temperature photoluminescence efficiency of Si-doped AlxGa1-xAs on the V/III flux ratio used during growth by molecular-beam epitaxy von TSUI, R. K, CURLESS, J. A, KRAMER, G. D, PEFFLEY, M. S

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Induction of ovoviviparity in Rhabditis by sulfur dioxide von Tsui, R.K, Walker, J.T

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Properties of Al x Ga1− x As ( x Al≂0.3) grown by molecular-beam epitaxy on misoriented substrates von Tsui, R. K., Curless, J. A., Kramer, G. D., Peffley, M. S., Wicks, G. W.

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