Comparative analysis of the optical quality of single In0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown by molecular beam epitaxy on (100) and (311) GaAs substrates von Brandt, O., Kanamoto, K., Tsugami, M., Isu, T., Tsukada, N.

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Reliability study on 50-100-mW CW operation of 680-nm visible laser diodes with a window-mirror structure von Shima, A., Tada, H., Motoda, T., Tsugami, M., Utakouji, T., Higuchi, H.

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Metalorganic chemical vapor deposition growth of high-quality AlGaAs using dimethylethylamine alane and triethylgallium–dimethylethylamine adduct von Miyashita, M., Kizuki, H., Tsugami, M., Fujii, N., Mihashi, Y., Takamiya, S.

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Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition von Mihashi, Y., Miyashita, M., Kaneno, N., Tsugami, M., Fujii, N., Takamiya, S., Mitsui, S.

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Mechanism of Zn passivation in AlGaInP layer grown by metalorganic chemical vapor deposition von Kadoiwa, K., Kato, M., Motoda, T., Ishida, T., Fujii, N., Hayafuji, N., Tsugami, M., Sonoda, T., Takamiya, S., Mitsui, S.

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Zn diffusion mechanism in n-GaAs/Zn-AlGaAs/Se-AlGaAs structures von Fujii, N., Kimura, T., Tsugami, M., Sonoda, T., Takamiya, S., Mitsui, S.

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Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si von Hayafuji, N., Ochi, S., Miyashita, M., Tsugami, M., Murotani, T., Kawagishi, A.

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Multi-wafer growth of highly uniform and high-quality AlGaInP/GaInP structure using high-speed rotating disk metalorganic chemical vapor deposition von Motoda, T., Kato, M., Kadoiwa, K., Shima, A., Tsugami, M., Sonoda, T., Takamiya, S., Mitsui, S.

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Uniform Fabrication of Highly Reliable, 50–60 mW-Class, 685 nm, Window-Mirror Lasers for Optical Data Storage von Tada, Hitoshi, Shima, Akihiro, Utakoji, Takeshi, Motoda, Takashi, Tsugami, Mari, Koki Nagahama, Koki Nagahama, Masao Aiga, Masao Aiga

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Improvement of InP crystal quality grown on GaAs substrates and device applications von Kimura, Tatsuya, Kimura, Tadashi, Ishimura, Eitaro, Uesugi, Fumito, Tsugami, Mari, Mizuguchi, Kazuo, Murotani, Toshio

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Utilizing Mobile in the Field of Medical Care von Yahata, K, Tsugami, M, Koga, M, Hada, T, Harada, H

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Quantitative correlation between oxygen impurity and current gain β of AlGaAs/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy von Izumi, Shigekazu, Sakai, Masayuki, Shimura, Teruyuki, Tsugami, Mari, Hayafuji, Norio, Sonoda, Takuji, Takamiya, Saburo, Susaki, Wataru, Mitsui, Shigeru

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Uniform fabrication of highly reliable, 50-60mW-class, 685 nm, window-mirror lasers for optical data storage von TADA, H, SHIMA, A, UTAKOJI, T, MOTODA, T, TSUGAMI, M, NAGAHAMA, K, AIGA, M

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Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing von Hayafuji, Norio, Kimura, Tatsuya, Yoshida, Naohito, Kaneno, Nobuaki, Tsugami, Mari, Mizuguchi, Kazuo, Murotani, Toshio, Ibuki, Sumiaki

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Mobile web logの在宅診療への応用 von 八幡, 勝也, 津上, 正晃, 古賀, 道恵, 波田, 哲朗, 原田, 浩喜

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Improvement of InP crystal quality grown on GaAs substrates and device applications von KIMURA, T, ISHIMURA, E, UESUGI, F, TSUGAMI, M, MIZUGUCHI, K, MUROTANI, T

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Reliability of 680-nm window laser diodes at 50-100 mW CW operation von Shima, A., Tada, H., Utakouji, T., Motoda, T., Tsugami, M., Higuchi, H., Aiga, M.

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1.5 mu m MQW-DFB laser diode with low chirp and low threshold current von Mizuguchi, K., Yoshida, N., Kimura, T., Takemoto, A., Ohkura, Y., Tsugami, M., Murotani, T.

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Characteristics of 680 nm-visible laser diode with MQB grown by MOCVD von Motoda, T., Kadoiwa, K., Kimura, T., Nishimura, T., Uesugi, F., Kamizato, T., Arimoto, S., Tsugami, M., Mizuguchi, K.

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Nasoethmoidal meningocele in a child presenting bilateral congenital cystic adenomatoid malformation: Evidence for a new entity or consequence of gestational exposures? von da Rosa, Ernani B., Silveira, Daniélle B., Tsugami, Laís G., Bellé, Nathan L., Matos, Izabelle O., Targa, Luciano V., Betat, Rosilene da S., da Cunha, André C., Villacis, Rolando A.R., Rogatto, Sílvia R., Dorfman, Luiza E., Rosa, Rafael F. M., Zen, Paulo R.G.

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