Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer von Tsuchiyama, Kazuaki, Yamane, Keisuke, Utsunomiya, Shu, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices von Tsuchiyama, Kazuaki, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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Fabrication of Si/SiO 2 /GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices von Tsuchiyama, Kazuaki, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO 2 /GaN-LED wafer von Tsuchiyama, Kazuaki, Yamane, Keisuke, Utsunomiya, Shu, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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SEMICONDUCTOR DEVICE von TSUCHIYAMA, Kazuaki, TSUKUDA, Tatsuaki

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Electronic device von Tsukuda, Tatsuaki, Tsuchiyama, Kazuaki

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Fabrication of CMOS/LED-mixed monolithic integrated circuits using Si/SiO2/GaN-LED substrate von Nakagawa, Syota, Tsuchiyama, Kazuaki, Utsunomiya, Syu, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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SEMICONDUCTOR DEVICE von TSUCHIYAMA KAZUAKI, TSUKUDA TATSUAKI

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Semiconductor device von TSUKUDA, TATSUAKI, TSUCHIYAMA, KAZUAKI

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Monolithic integration of GaN micro-LED and polymer waveguide for optical interconnection von Nitta, Ryo, Tsuchiyama, Kazuaki, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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Semiconductor device von TSUCHIYAMA KAZUAKI, TSUKUDA TATSUAKI

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Monolithic integration of GaN-μLED/PD and COP waveguide for optoelectronic ICs von Tsuchiyama, Kazuaki, Sekiguchi, Hiroto, Nitta, Ryo, Yasunaga, Hiroki, Yamane, Keisuke, Okada, Hiroshi, Wakahara, Akihiro

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Fabrication of planar GaN-LED using the ion implantation techniques von Kamizuki, Seiya, Tsuchiyama, Kazuaki, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hirosi, Wakahara, Akihiro

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Development of large-scale optoelectronic integration circuits using GaN-based LED von Tsuchiyama, Kazuaki, Utsunomiya, Shu, Nakagawa, Shota, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED structure von Tsuchiyama, Kazuaki, Utsunomiya, Shu, Nakagawa, Shota, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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Investigation of thermal tolerance of Si / SiO2 / GaN /Sapphire structure for integrally formation in MOS transistor and light-emitting device von Utsunomiya, Shu, Tachihara, Yoshiki, Tsuchiyama, Kazuaki, Okada, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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Fabrication of InGaN µ-LED arrays and evaluation of electrical and luminescence properties von Tsuchiyama, Kazuaki, Sekiguchi, Hiroto, Tahara, Hiroyuki, Okada, Hiroshi, Wakahara, Akihiro

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Fabrication of micro-light emitting diodes on Si / SiO2 / GaN based LED wafer von Tsuchiyama, Kazuaki, Utsunomiya, Shu, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

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Semiconductor device von Tsuchiyama, Kazuaki, Suwa, Motoo, Takahashi, Hidemasa

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Nitride semiconductor to silicon direct bonding at room temperature von Tsuchiyama, Kazuaki, Tahara, Hiroyuki, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, wakahara, Akihiro

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