Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures von Tolle, J., Chizmeshya, A. V. G., Fang, Y.-Y., Kouvetakis, J., D’Costa, V. R., Hu, C.-W., Menéndez, J., Tsong, I. S. T.

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Stress evolution during metalorganic chemical vapor deposition of GaN von Hearne, S., Chason, E., Han, J., Floro, J. A., Figiel, J., Hunter, J., Amano, H., Tsong, I. S. T.

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Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer von Tolle, J., Roucka, R., Tsong, I. S. T., Ritter, C., Crozier, P. A., Chizmeshya, A. V. G., Kouvetakis, J.

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Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures von Hearne, S. J., Han, J., Lee, S. R., Floro, J. A., Follstaedt, D. M., Chason, E., Tsong, I. S. T.

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Optical characterization of Si1−xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers von Poweleit, C. D., Hu, C.-W., Tsong, I. S. T., Tolle, J., Kouvetakis, J.

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Effect of nitridation on the growth of GaN on ZrB2(0001)∕Si(111) by molecular-beam epitaxy von Wang, Zhi-Tao, Yamada-Takamura, Y., Fujikawa, Y., Sakurai, T., Xue, Q. K., Tolle, J., Kouvetakis, J., Tsong, I. S. T.

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Epitaxial film growth of zirconium diboride on Si(0 0 1) von Roucka, R., Tolle, J., Chizmeshya, A.V.G., Tsong, I.S.T., Kouvetakis, J.

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Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN von Roucka, R, Tolle, J, Chizmeshya, A V G, Crozier, P A, Poweleit, C D, Smith, D J, Tsong, I S T, Kouvetakis, J

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Growth and optical properties of epitaxial GaN films on Si(1 1 1) using single gas-source molecular beam epitaxy von Torrison, Levi, Tolle, John, Tsong, Ignatius S.T., Kouvetakis, John

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Striped Phase and Temperature Dependent Step Shape Transition on Highly B-Doped Si(001)-(2 x 1) Surfaces von Jones, DE, Pelz, JP, Hong, Y, Bauer, E, Tsong, IS

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Scanning tunneling microscopy of an ion-bombarded PbS(001) surface von WILSON, I. H, ZHENG, N. J, KNIPPING, U, TSONG, I. S. T

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Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3) von Hu, C.-W., Bell, A., Shi, L., Ponce, F. A., Smith, D. J., Tsong, I. S. T.

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Etching of Si(111)-(7×7) and Si(100)-(2×1) surfaces by atomic hydrogen von Wei, Yi, Li, Lian, Tsong, I. S. T.

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Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching von Stirman, J. N., Ponce, F. A., Pavlovska, A., Tsong, I. S. T., Smith, David J.

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Field-ion scanning tunneling microscopy study of the atomic structure of 6H–SiC(0001) surfaces cleaned by in   situ Si molecular beam etching von Li, L., Hasegawa, Y., Sakurai, T., Tsong, I. S. T.

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Influence of 6H–SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers von Torres, V. M., Edwards, J. L., Wilkens, B. J., Smith, David J., Doak, R. B., Tsong, I. S. T.

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Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces von FEIL, H, ZANDVLIET, H. J. W, TSAI, M.-H, DOW, J. D, TSONG, I. S. T

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Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy von XUE, Q. K, XUE, Q. Z, KUWANO, S, SAKURAI, T, OHNO, T, TSONG, I. S. T, QIU, X. G, SEGAWA, Y

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Scanning tunneling microscopy and spectroscopy of cubic β-SiC(111) surfaces von Chang, C.S., Tsong, I.S.T., Wang, Y.C., Davis, R.F.

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Oxygen etching of the Si(100)-(2 × 1) surface von Wei, Y., Hong, Y., Tsong, I.S.T.

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