DC Characteristics of Gamma-ray Irradiated SiGe HBT in Comparison with Si BJT von Meng, Xiang-Ti, Huang, Qian, Wang, Ji-Lin, Chen, Pei-Yi, Tsien, Pei-Hsin

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Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure von Liu Zhihong Chen Changchun Lin Huiwang Xiong Xiaoyi Dou Weizhi Tsien Pei-Hsin

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Growth of SiGe film by using a single-wafer rapid thermal processing UHV/CVD system von Huang, Wentao, Chen, Changchun, Li, Xiyou, Xiong, Xiaoyi, Liu, Zhihong, Zhang, Wei, Xu, Jun, Tsien, Pei-hsin

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Composition determination of Si/Si1−xGex/Si by photoreflectance spectroscopy von Chen, Changchun, Kelly, P. V., Liu, Zhihong, Huang, Wentao, Dou, Weizhi, Tsien, Pei-Hsin

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Emitter-ballasting-resistor-free SiGe microwave power heterojunction bipolar transistor von Zhang, Jinshu, Jia, Hongyong, Tsien, Pei-Hsin, Lo, Tai-Chin

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Cross-sectional transmission electron microscopy study of Si/SiGe heterojunction bipolar transistor structure grown by ultra-high vacuum chemical vapor deposition von ZHANG, J, JIN, X, TSIEN, P.-H, LO, T.-C

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Novel strained Si/relaxed SiGe channel PMOSFETs von Li, Chen, Luo, Guangli, Liu, Zhinong, Chen, Peiyi, Tsien, Pei-Hsin

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Effects of neutron irradiation on SiGe HBT and Si BJT devices von MENG, Xiang-Ti, YANG, Hong-Wei, KANG, Ai-Guo, WANG, Ji-Lin, JIA, Hong-Yong, CHEN, Pei-Yi, TSIEN, Pei-Hsin

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n- Si /i-p-i  SiGe/n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy von Zhang, Jinshu, Jin, Xiaojun, Jia, Hongyong, Chen, Peiyi, Tsien, Pei-Hsin, Feng, M. X., Lin, Q. Y., Lo, Tai-Chin

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Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure von Zhang, Jinshu, Jin, Xiaojun, Tsien, Pei-Hsin, Lo, Tai-Chin

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The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD von CHEN Chang-chun, LIU Zhi-Hong, HUANG Wen-Tao, DOU Wei-Zhi, ZHANG Wei, TSIEN Pei-Hsin, ZHU De-Zhang

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High-quality n-Si/i-p+-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy von Zhang, Jinshu, Jia, Hongyong, Chen, Peiyi, Tsien, Pei-hsin, Feng, M X, Lin, Q Y, Lo, Tai-chin

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Localization of the boundaries in laser recrystallization of SOI with antireflective stripe von Ma, Teng-Ge, Yang, Xian-Jun, Zhang, Ji-Sheng, Tsien, Pei-Hsin

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Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing von Ye, Min, Burte, Edmund, Tsien, Pei-Hsin, Ryssel, Heiner

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SiGe HV/CVD epitaxy growth on patterned Si substrate von Liu Zhi-nong, Chen Pei-yi, Yan Yun-jie, Tsien Pei-Hsin

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UHV/CVD self-organized growth of Ge quantum dots von Wentao Huang, Guangli Luo, Jin Shi, Chen Li, Peiyi Chen, Pei-Hsin Tsien

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Composition determination of Si/Si sub(1-x)Ge sub(x)/Si by photoreflectance spectroscopy von Chen, Changchun, Kelly, P V, Liu, Zhihong, Huang, Wentao, Dou, Weizhi, Tsien, Pei-Hsin

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Composition Determination of Si/Si1-xGex/Si by Photoreflectance Spectroscopy von Chang Chun Chen, P. V. Kelly, Zhi Hong Liu, Wen Tao Huang, Wei Zhi Dou, Pei Hsin Tsien

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Growth of SiGe Film By Using A Single-wafer Rapid Thermal Processing UHV/CVD System von Wen Tao Huang, Chang Chun Chen, Xi You Li, Xiao Yi Xiong, Zhi Hong Liu, Wei Zhang, Jun Xu, Pei Hsin Tsien

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A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing von Zhi Hong Liu, Chang Chun Chen, Wen Tao Huang, Wei Zhi Dou, Yi Lin Shan, Wei Zhang, Jun Zhu, Pei Hsin Tsien

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