Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory von Hu, Chih-Wei, Chang, Ting-Chang, Liu, Po-Tsun, Tu, Chun-Hao, Lee, Sheng-Kai, Sze, Simon M., Chang, Chun-Yen, Chiou, Bi-Shiou, Tseng, Tseung-Yuan

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Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer von Tu, Chun-Hao, Chang, Ting-Chang, Liu, Po-Tsun, Liu, Hsin-Chou, Tsai, Chia-Chou, Chang, Li-Ting, Tseng, Tseung-Yuan, Sze, Simon M., Chang, Chun-Yen

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Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layerfor the application on nonvolatile memory von Hu, Chih-Wei, Chang, Ting-Chang, Liu, Po-Tsun, Tu, Chun-Hao, Lee, Sheng-Kai, Sze, Simon M., Chang, Chun-Yen, Chiou, Bi-Shiou, Tseng, Tseung-Yuan

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A Fabrication of Germanium Nanocrystal Embedded in Silicon-Oxygen-Nitride Layer von Tu, Chun-Hao, Chang, Ting-Chang, Liu, Po-Tsun, Liu, Hsin-Chou, Weng, Chi-Feng, Shy, Jang-Hung, Tseng, Bae-Heng, Tseng, Tseung-Yuan, Sze, Simon M., Chang, Chun-Yen

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Formation of germanium nanocrystals embeddedin silicon-oxygen-nitride layer von Tu, Chun-Hao, Chang, Ting-Chang, Liu, Po-Tsun, Liu, Hsin-Chou, Tsai, Chia-Chou, Chang, Li-Ting, Tseng, Tseung-Yuan, Sze, Simon M., Chang, Chun-Yen

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Gate controlled field emission triode and process for fabricating the same von LEE CHIA-YING, LIN PANG, LI SEU-YI, TSENG TSEUNG-YUAN

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Gate controlled field emission triode and process for fabricating the same von Lee, Chia-Ying, Li, Seu-Yi, Lin, Pang, Tseng, Tseung-Yuan

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Gate controlled field emission triode and process for fabricating the same von LEE CHIA-YING, LIN PANG, TSENG TSEUNG-YUEN, LI SEU-YI, TSENG TSEUNG-YUAN

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Nonvolatile memory and fabrication method thereof von LIN, CHUN CHIEH, TSENG, TSEUNG YUAN, LIN, CHAO CHENG

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Nonvolatile memory and fabrication method thereof von LIN, CHUNIEH, LIN, CHAONG, TSENG, TSEUNG-YUAN

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Gate controlled filed emission triode and process for fabricating the same von LI, SEU YI, TSENG, TSEUNG YUAN, LEE, CHIA YING, LIN, PANG

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Gate controlled filed emission triode and process for fabricating the same von LI, SEU-YI, LEE, CHIA-YING, LIN, PANG, TSENG, TSEUNG-YUAN

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Observing the evolution of graphene layers at high current density von Huang, Chun-Wei, Chen, Jui-Yuan, Chiu, Chung-Hua, Hsin, Cheng-Lun, Tseng, Tseung-Yuen, Wu, Wen-Wei

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