Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure von Shalygin, V. A., Moldavskaya, M. D., Vinnichenko, M. Ya, Maremyanin, K. V., Artemyev, A. A., Panevin, V. Yu, Vorobjev, L. E., Firsov, D. A., Korotyeyev, V. V., Sakharov, A. V., Zavarin, E. E., Arteev, D. S., Lundin, W. V., Tsatsulnikov, A. F., Suihkonen, S., Kauppinen, C.

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Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling von Rozhavskaya, M. M., Lundin, W. V., Troshkov, S. I., Tsatsulnikov, A. F., Dubrovskii, V. G.

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Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells von Arteev, D. S., Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Zakheim, D. A., Tsatsulnikov, A. F.

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Stress-dislocation management in MOVPE of GaN on SiC wafers von Rudinsky, M. E., Yakovlev, E. V., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Velikovskiy, L. E.

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Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam von Sakharov, A. V., Usov, S. O., Rodin, S. N., Lundin, W. V., Tsatsulnikov, A. F., Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Kaliteevskii, M. A., Evtikhiev, V. P.

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Selective Epitaxy of Submicron GaN Structures von Lundin, W. V., Tsatsulnikov, A. F., Rodin, S. N., Sakharov, A. V., Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Evtikhiev, V. P.

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(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell von Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs von Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Zakheim, D. A., Usov, S. O., Tsatsulnikov, A. F., Yagovkina, M. A., Sim, P. E., Demchenko, O. I., Kurbanova, N. Y., Velikovskiy, L. E.

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Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure von Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

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Critical spatial disorder in InGaN resonant Bragg structures von Ivanov, A. A., Chaldyshev, V. V., Ushanov, V. I., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

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Stress Analysis of GaN-Based Heterostructures on Silicon Substrates von Arteev, D. S., Sakharov, A. V., Zavarin, E. E., Nikolaev, A. E., Yagovkina, M. A., Tsatsulnikov, A. F.

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Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures von Arteev, D S, Sakharov, A V, Lundin, W V, Zavarin, E E, Tsatsulnikov, A F

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Determination of hole diffusion length in n-GaN von Arteev, D S, Sakharov, A V, Nikolaev, A E, Zavarin, E E, Lundin, W V, Tsatsulnikov, A F

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Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells von Ivanov, A A, Chaldyshev, V V, Zavarin, E E, Sakharov, A V, Lundin, W V, Tsatsulnikov, A F

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A GaN/AlGaN Resonance Bragg Structure von Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

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Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range von Lundin, V. V., Rodin, S. N., Sakharov, A. V., Tsatsulnikov, A. F., Lobanova, A. V., Bogdanov, M. V., Talalaev, R. A., Sun, Haiding, Long, Shibing

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Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes von Arteev, D S, Karpov, S Y, Sakharov, A V, Nikolaev, A E, Usov, S O, Lundin, W V, Tsatsulnikov, A F

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Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors von Arteev, D S, Sakharov, A V, Lundin, W V, Zavarin, E E, Zakheim, D A, Tsatsulnikov, A F, Gindina, M I, Brunkov, P N

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Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation von Arteev, D S, Sakharov, A V, Lundin, W V, Zakheim, D A, Zavarin, E E, Tsatsulnikov, A F

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III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors von Arteev, D S, Sakharov, A V, Nikolaev, A E, Lundin, W V, Tsatsulnikov, A F

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