Terahertz electroluminescence from boron-doped silicon devices von Adam, T. N., Troeger, R. T., Ray, S. K., Lv, P.-C., Kolodzey, J.

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Electroluminescence at 7 terahertz from phosphorus donors in silicon von Lv, P.-C., Troeger, R. T., Adam, T. N., Kim, S., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.

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Cyclic deep reactive ion etching with mask replenishment von Adam, T N, Kim, S, Lv, P-C, Xuan, G, Ray, S K, Troeger, R T, Prather, D, Kolodzey, J

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Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1−xGex films von Ray, S. K., Adam, T. N., Troeger, R. T., Kolodzey, J., Looney, G., Rosen, A.

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Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures von Altukhov, I.V., Chirkova, E.G., Sinis, V.P., Kagan, M.S., Troeger, R.T., Ray, S.K., Kolodzey, J., Prokofiev, A.A., Odnoblyudov, M.A., Yassievich, I.N.

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THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures von Kagan, M. S., Altukhov, I. V., Chirkova, E. G., Sinis, V. P., Troeger, R. T., Ray, S. K., Kolodzey, J.

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Terahertz emission from electrically pumped gallium doped silicon devices von Lv, P.-C., Troeger, R. T., Kim, S., Ray, S. K., Goossen, K. W., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.

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Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing von Dashiell, M.W., Troeger, R.T., Rommel, S.L., Adam, T.N., Berger, P.R., Guedj, C., Kolodzey, J., Seabaugh, A.C., Lake, R.

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Electrical and optical properties of phosphorus doped Ge1-yCy von DASHIELL, M. W, TROEGER, R. T, ROE, K. J, KHAN, A.-S, ORNER, B, OLOWOLAFE, J. O, BERGER, P. R, WILSON, R. G, KOLODZEY, J

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Capacitance study of selectively doped SiGe/Si heterostructures von Antonova, I V, Obodnikov, V I, Kagan, M S, Troeger, R T, Ray, S K, Kolodzey, J

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Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters von Lv, P.-C., Troeger, R. T., Zhang, X., Adam, T. N., Kolodzey, J., Odnoblyudov, M. A., Yassievich, I. N.

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THz lasing of SiGe/Si quantum-well structures due to shallow acceptors von Kagan, M. S., Altukhov, I. V., Chirkova, E. G., Sinis, V. P., Troeger, R. T., Ray, S. K., Kolodzey, J.

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1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes von Shao, Xiaoping, Rommel, S. L., Orner, B. A., Feng, H., Dashiell, M. W., Troeger, R. T., Kolodzey, J., Berger, Paul R., Laursen, Thomas

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The design and fabrication of microdisk resonators for terahertz frequency operation von Adam, T.N., Shi, S., Ray, S.K., Troeger, R.T., Prather, D., Kolodzey, J.

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Hot hole redistribution in impurity states of boron-doped siliconterahertz emitters von Lv, P.-C., Troeger, R. T., Zhang, X., Adam, T. N., Kolodzey, J., Odnoblyudov, M. A., Yassievich, I. N.

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The design and operation of TeraHertz sources based on silicon germanium alloys von Kolodzey, J., Adam, T.N., Troeger, R.T., Lv, P.-C., Ray, S.K., Looney, G., Rosen, A., Kagan, M.S., Yassievich, I.N.

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Capacitance study of selectively doped SiGe/Si heterostructures von ANTONOVA, I. V, OBODNIKOV, V. I, KAGAN, M. S, TROEGER, R. T, RAY, S. K, KOLODZEY, J

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TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON von TROEGER, R. T., ADAM, T. N., RAY, S. K., LV, P.-C., KIM, S., KOLODZEY, J.

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Electrical and optical properties of phosphorus doped Ge sub(1-y)C sub(y) von Dashiell, M W, Troeger, R T, Roe, K J, Khan, A-S, Orner, B, Olowolafe, J O, Berger, P R, Wilson, R G, Kolodzey, J

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THz lasing of SiGe/Si quantum-well structures due to shallow acceptors von Kagan, M S, Altukhov, I V, Chirkova, E G, Sinis, V P, Troeger, R T, Ray, S K, Kolodzey, J

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