Interstitial-related reactions in silicon doped with isovalent impurities von KHIRUNENKO, L. I, KOBZAR, O. O, POMOZOV, Yu. V, SOSNIN, M. G, TRIPACHKO, M. O, ABROSIMOV, N. V, RIEMANN, H

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Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium von Khirunenko, Lyudmila I., Pomozov, Yu.V., Tripachko, N.A., Kobzar, O.A., Sosnin, Mikhail G., Riemann, H., Abrosimov, Nikolay V.

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Defect-impurity interactions in irradiated tin-doped Cz-Si crystals von Khirunenko, L. I., Kobzar, O. A., Pomozov, Yu. V., Sosnin, M. G., Tripachko, N. A., Markevich, V. P., Murin, L. I., Peaker, A. R.

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The role of tin in reactions involving carbon interstitial atoms in irradiated silicon von Khirunenko, L. I., Kobzar’, O. A., Pomozov, Yu. V., Sosnin, M. G., Tripachko, N. A.

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