1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches von Hilsenbeck, Jochen, Rupp, Roland, Treu, Michael, Domes, Daniel, Kutschak, M.A., Björk, Fanny

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Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues von Treu, M, Rupp, R, Solkner, G

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Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure von Soelkner, Gerald, Kaindl, Winfried, Treu, Michael, Peters, Dethard

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Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide von Friedrichs, Peter, Ryssel, Heiner, Treu, Michael, Rupp, Roland, Wiedenhofer, A., Schörner, Reinhold, Stephani, Dietrich

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Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement von Hilsenbeck, Jochen, Rupp, Roland, Elpelt, Rudolf, Treu, Michael, Peters, Dethard

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Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations von Hilsenbeck, Jochen, Rupp, Roland, Kern, Ronny, Rüschenschmidt, Kathrin, Holz, Matthias, Treu, Michael

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SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch von Rueschenschmidt, Kathrin, Friedrichs, Peter, Treu, Michael, Peters, Dethard, Rupp, Roland, Elpelt, Rudolf, Blaschitz, Peter

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SiC JFETs for Power Module Applications von Hilsenbeck, Jochen, Rupp, Roland, Rüschenschmidt, Kathrin, Xi, Zhang, Domes, Daniel, Treu, Michael

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A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses von Hilsenbeck, Jochen, Otremba, Ralf, Treu, Michael, Rupp, Roland, Holz, Matthias, Zeichen, Hannes, Björk, Fanny, Deboy, Gerald

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Semiconductor device including a bidirectional switch von Treu, Michael, Schiess, Klaus, Otremba, Ralf

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Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC von Kapels, H., Rupp, Roland, Treu, Michael, Bartsch, Wolfgang

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A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications von Hilsenbeck, Jochen, Treu, Michael, Peters, Dethard, Reimann, T., Rupp, Roland, Elpelt, Rudolf, Brunner, Helmut, Tai, Chee Siew, Blaschitz, Peter

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Semiconductor Device Including a Bidirectional Switch von Treu, Michael, Schiess, Klaus, Otremba, Ralf

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Electro-Thermal SPICE Model for High-Voltage SiC VJFETs von Hippeli, J., Friedrichs, Peter, Elpelt, Rudolf, Türkes, Peter, Treu, Michael, Schörner, Reinhold

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TRENCH JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A MESA REGION von TREU, Michael Franz, AICHRIEDLER, Leo, RIEGLER, Andreas, HANS, Weber

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TRENCH JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A MESA REGION von TREU, Michael Franz, AICHRIEDLER, Leo, RIEGLER, Andreas, WEBER, Hans

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Semiconductor device including a bidirectional switch von Treu, Michael, Schiess, Klaus, Otremba, Ralf

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Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices von Ciappa, Mauro, Treu, Michael, Buzzo, Marco, Fichtner, Wolfgang

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Semiconductor Device Including a Bidirectional Switch von Treu, Michael, Schiess, Klaus, Otremba, Ralf

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Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability von Treu, Michael, Scherg, Thomas, Beermann, H., Rupp, Roland, Türkes, Peter, Preis, Herbert, Cerva, Hans

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