Catalyst-free growth of needle-shaped carbon filaments at low temperature in a near-critical binary fluid von Rantonen, N.J.K., Toyabe, T., Maekawa, T.

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Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs von Kajiwara, K., Nakajima, Y., Hanajiri, T., Toyabe, T., Sugano, T.

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Drive Current Enhancement in Silicon-on-Quartz MOSFETs von Nakajima, Y., Sasaki, K., Hanajiri, T., Toyabe, T., Sugano, T.

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Human body model ESD simulation including self heating effect von Takani, T., Toyabe, T.

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Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs von Hanajiri, T, Toyabe, T, Sugano, T

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Confirmation of electric properties of traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface by three-dimensional device simulation von Nakajima, Y, Sasaki, K, Hanajiri, T, Toyabe, T, Morikawa, T, Sugano, T

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Scaling rules for SOI MOSFETs operating in the fully inverted mode von Hanajiri, T., Niizato, M., Aoto, K., Toyabe, T., Nakajima, Y., Morikawa, T., Sugano, T.

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An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region von Hanajiri, T, Aoto, K, Hoshino, T, Niizato, M, Nakajima, Y, Toyabe, T, Morikawa, T, Sugano, T, Akagi, Y

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Short-channel-effect-suppressed sub-0.1-μm grooved-gate MOSFET's with W gate von KIMURA, S, TANAKA, J, NODA, H, TOYABE, T, IHARA, S

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Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX Interfaces von Nakajima, Y, Watanabe, Y, Hanajiri, T, Toyabe, T, Sugano, T

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Threshold Voltage Model of Single Gate SOI MOSFETs Derived from Asymptotic Method von Aoyama, J., Takani, T., Toyabe, T., Kalachev, L.

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Simulation of sub-0.1- mu m MOSFETs with completely suppressed short-channel effect von Tanaka, J., Toyabe, T., Ihara, S., Kimura, S., Noda, H., Itoh, K.

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Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis von Toyabe, T., Asai, S.

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Synthesis of carbyne analogues by cathodic electrolysis of hexachlorobutadiene von Kijima, M., Toyabe, T., Shirakawa, H., Kawata, S., Kyotani, H., Kyotani, M., Nakamura, Y., Endo, T.

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Submicrometer MOSFET structure for minimizing hot-carrier generation von Takeda, E., Kume, H., Toyabe, T., Asai, S.

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A cross section of alpha -particle-induced soft-error phenomena in VLSIs von Takeda, E., Takeuchi, K., Hisamoto, D., Toyabe, T., Ohshima, K., Itoh, K.

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Analytical models of threshold voltage and breakdown voltage of short-channel MOSFETs derived from two-dimensional analysis von Toyabe, T., Asai, S.

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Transmission matrix approach for electron transport in inversion layers von Patil, M.B., Okuyama, Y., Ohkura, Y., Toyabe, T., Ihara, S.

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Three-dimensional device simulator Caddeth with highly convergent matrix solution algorithms von Toyabe, T., Masuda, H., Aoki, Y., Shukuri, H., Hagiwara, T.

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On coupling the drift-diffusion and Monte Carlo models for MOSFET simulation von Patil, Mahesh B., Ohkura, Y., Toyabe, T., Ihara, S.

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