High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors von Nishida, Toshio, Ban, Tomoyuki, Kobayashi, Naoki

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Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN von Nishida, Toshio, Saito, Hisao, Kobayashi, Naoki

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GaN-free transparent ultraviolet light-emitting diodes von Nishida, Toshio, Kobayashi, Naoki, Ban, Tomoyuki

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Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region von Nishida, Toshio, Saito, Hisao, Kobayashi, Naoki

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AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates von Nishida, Toshio, Makimoto, Toshiki, Saito, Hisao, Ban, Tomoyuki

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Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors von Maeda, Narihiko, Nishida, Toshio, Kobayashi, Naoki, Tomizawa, Masaaki

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Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%) von Makimoto, Toshiki, Saito, Hisao, Nishida, Toshio, Kobayashi, Naoki

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Development of Oxide Dispersion Strengthened Ferritic Steels for FBR Core Application, (I) von UKAI, Shigeharu, NISHIDA, Toshio, OKADA, Hirokazu, OKUDA, Takanari, FUJIWARA, Masayuki, ASABE, Kazutaka

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Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors von Maeda, Narihiko, Saitoh, Tadashi, Tsubaki, Kotaro, Nishida, Toshio, Kobayashi, Naoki

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An InGaN-based horizontal-cavity surface-emitting laser diode von Akasaka, Tetsuya, Nishida, Toshio, Makimoto, Toshiki, Kobayashi, Naoki

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Superior Pinch-Off Characteristics at 400 ° C in AlGaN/GaN Heterostructure Field Effect Transistors von Maeda, Narihiko, Saitoh, Tadashi, Tsubaki, Kotaro, Nishida, Toshio, Kobayashi, Naoki

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Highly Transparent Structure for Nitride Ultraviolet Light Emitting Diodes von Nishida, Toshio, Ban, Tomoyuki, Kobayashi, Naoki

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Fabrication of an InGaN multiple-quantum-well laser diode featuring high reflectivity semiconductor/air distributed Bragg reflectors von Wang, Hailong, Kumagai, Masami, Tawara, Takehiko, Nishida, Toshio, Akasaka, Tetsuya, Kobayashi, Naoki, Saitoh, Tadashi

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Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes von MAKIMOTO, Toshiki, KUMAKURA, Kazuhide, NISHIDA, Toshio, KOBAYASHI, Naoki

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Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodes von Saitoh, Tadashi, Kumagai, Masami, Wang, Hailong, Tawara, Takehiko, Nishida, Toshio, Akasaka, Testuya, Kobayashi, Naoki

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Room-temperature lasing of InGaN multiquantum-well hexagonal microfacet lasers by current injection von Akasaka, Tetsuya, Ando, Seigo, Nishida, Toshio, Saito, Hisao, Kobayashi, Naoki

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Step-free surface grown on GaAs (111)B substrate by local metalorganic vapor phase epitaxy von NISHIDA, T, KOBAYASHI, N

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Step-free surface grown on GaAs (111)B substrate by selective area metalorganic vapor phase epitaxy von Nishida, Toshio, Kobayashi, Naoki

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Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect von Maeda, Narihiko, Saitoh, Tadashi, Tsubaki, Kotaro, Nishida, Toshio, Kobayashi, Naoki

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Current-confining structure of InGaN hexagonal microfacet lasers by selective incorporation of Mg during selective-area MOVPE von Akasaka, Tetsuya, Ando, Seigo, Nishida, Toshio, Saitoh, Tadashi, Kobayashi, Naoki

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